Chalcogenide-based
type II heterojunctions are considered to be
a promising candidate for optoelectronic device fabrication such as
in solar cells, photodetectors, and light-emitting diodes. Type II
heterosystems effectively help in the delocalization of charge carriers
owing to facile band arrangements, preventing the recombination of
photogenerated carriers resulting in improved photovoltaic efficiency.
Herein, we report the synthesis of CZTS nanoparticles and CdS quantum
dots using a facile and low-cost hot-injection method followed by
fabrication of CZTS, CdS, and CZTS/CdS heterojunction thin films with
the help of a spin-coating technique at room temperature. We demonstrated
through a combination of steady-state photoluminescence and femtosecond
pump–probe spectroscopy experiments that a type-II, staggered
band alignment of a CZTS/CdS junction is encouraging for charge carrier
transport. We monitored the ultrafast charge carrier dynamics in the
junction and confirmed the efficient separation of photoexcited charge
carriers in the CZTS/CdS heterojunction. In the CZTS/CdS heterojunction,
the photoexcited electrons are transferred from CZTS to CdS, which
resulted in a drastic increment of the bleach signal intensity compared
to that of bare CdS. Similarly, the photoexcited holes are transferred
from CdS to CZTS, monitored by steady-state and time-resolved spectroscopy.
A slower bleach recovery confirms the spatial charge separation at
the interface of the CZTS/CdS heterojunction, placing electrons and
holes at CdS and CZTS, respectively. The controlled introduction of
charge carriers and charge separation dynamics in the heterointerface
reported here provides a promising approach toward designing CZTS-based
solar cells and will open up new avenues for developing more efficient
Cu chalcogenide-based photovoltaic and photocatalytic devices.