Tuning in to RF MEMS

Rebeiz, Gabriel M.; Entesari, Kamran; Reines, Isak C.; Park, S.-j.; El‐Tanani, Mohamed; Grichener, Alex; Brown, Andrew R.

doi:10.1109/mmm.2009.933592

Cited by 283 publications

(114 citation statements)

References 51 publications

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“…Intense research in emerging switch technologies has focused on achieving levels of performance far beyond that available using CMOS (complementary metal oxide semiconductors) technology. Microelectromechanical system-based switches use a mechanical movement, usually activated by a voltage/current, to control an ohmic or capacitive contact 4,5 . Although superior to gallium arsenide and silicon-based switches in terms of energy consumption and transmission properties, microelectromechanical system switches suffer from issues such as speed, dielectric charging and contact interface degradation 4,5 .…”

mentioning

confidence: 99%

“…Microelectromechanical system-based switches use a mechanical movement, usually activated by a voltage/current, to control an ohmic or capacitive contact 4,5 . Although superior to gallium arsenide and silicon-based switches in terms of energy consumption and transmission properties, microelectromechanical system switches suffer from issues such as speed, dielectric charging and contact interface degradation 4,5 . Other devices rely on recrystallization and amorphorization of a phase-change material (for example, germanium telluride) or the metal-insulator phase transition in strongly correlated materials (such as vanadium oxide, VO 2 ) to change the resistance state [6][7][8][9] .…”

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confidence: 99%

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Nanoscale memristive radiofrequency switches

et al. 2015

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Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a nanoscale radiofrequency switch based on a memristive device. The device can be programmed with a voltage as low as 0.4 V and has an ON/OFF conductance ratio up to 10 12 with long state retention. We measure the radiofrequency performance of the switch up to 110 GHz and demonstrate low insertion loss (0.3 dB at 40 GHz), high isolation (30 dB at 40 GHz), an average cutoff frequency of 35 THz and competitive linearity and power-handling capability. Our results suggest that, in addition to their application in memory and computing, memristive devices are also a leading contender for radiofrequency switch applications.

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confidence: 99%

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confidence: 99%

Nanoscale memristive radiofrequency switches

et al. 2015

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“…They have reduced size and weight, means fewer power consumption and there are lower component counts. MEMS promises superior electrical performances and are built with low cost [1]. They can be produced at massive level.…”

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confidence: 99%

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Riaz¹,

Sindhu²,

Zaidi³

2018

Adv. sci. technol. eng. syst. j.

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“…However, the tuning speed is slower than 1 μs [6]. The semiconductor varactor diode has a fast fundamental tuning speed in the order of nanoseconds [7], [12], [13]. However, the actual tuning speed of the varactor-based RF filter is limited by the time constant of the bias network.…”

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confidence: 99%

Rapidly Tunable Dual-Comb RF Photonic Filter for Ultrabroadband RF Spread Spectrum Applications

Kim

Leaird

Weiner

2016

IEEE Trans. Microwave Theory Techn.

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Abstract-We demonstrate a rapidly frequency-tunable radio frequency (RF) filter using microwave photonics technology for ultrawideband RF spread spectrum applications. A pair of electro-optic frequency combs is arranged as a dispersive tapped delay line in a differential detection configuration to implement a programmable finite impulse response RF filter. Our photonic scheme enables both fast frequency tuning on the order of tens of nanoseconds and wide tuning range (>7.5 GHz) with minimal variation of RF gain and passband shape. The low control voltage (ca. 1 V) and the linear relationship between control voltage and passband frequency facilitate agile frequency tuning for processing of signals with time-varying frequency content, while differential detection increases the photocurrent by a factor of two and suppresses common mode intensity noise. We exploit the rapid tunability of the implemented filter to demonstrate dynamic tracking of frequency-hopped and chirped RF signals. An experiment that performs dynamic filtering of an input chirp signal (3.92-GHz center frequency, up-chirped by >2 GHz within 100 ns) obscured by strong broadband noise achieves ∼11-dB signal-to-noise ratio (SNR) improvement. The SNR obtained is in addition to that available from standard matched filtering or pulse compression processing, suggesting strong potential for enhanced resistance against broadband noise jamming.

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Tuning in to RF MEMS

Cited by 283 publications

References 51 publications

Nanoscale memristive radiofrequency switches

Nanoscale memristive radiofrequency switches

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Rapidly Tunable Dual-Comb RF Photonic Filter for Ultrabroadband RF Spread Spectrum Applications

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