Tuning of Interlayer Coupling in Large-Area Graphene/WSe<sub>2</sub> van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications

Tan, Yang; Liu, Xiaobiao; He, Zhiliang; Liu, Yanran; Zhao, Mingwen; Zhang, Han; Chen, Feng

doi:10.1021/acsphotonics.7b00296

Cited by 80 publications

(49 citation statements)

References 44 publications

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“…Defect engineering of materials, which can be achieved by irradiation of particles such as electrons or ions, provides an effective way to modulate properties of materials, as proven in silicon industry. Currently, diverse irradiation sources, including argon ions (Ar + ) [22,23], electrons [24][25][26], helium ions (He + ) [27][28][29], carbon ions [30] and oxygen plasma [31][32][33], have been utilized to bombard 2D materials. Irradiation could controllably introduce defects that strongly scatter phonons and electrons limited in the 2D surface, which generally degrades the intrinsic properties of 2D materials including mechanical strength [34], carrier mobility [23] and thermal conductivity [35].…”

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confidence: 99%

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Hong

Hou

et al. 2018

Sci. China Mater.

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Two-dimensional (2D) materials have attracted growing attention since the discovery of graphene [1]. Transition metal dichalcogenide (TMD) semiconductors, such as MoS 2 and WS 2 , became popular materials in recent years, because they usually have intrinsic bandgaps and an indirect-to-direct bandgap transition from bulk to monolayer limit [2][3][4][5][6]. Although graphene and TMDs are promising materials in field-effect devices [7][8][9], their heterostructures are more advanced in charge-splitting functions for the applications in optoelectronic devices [10][11][12][13][14][15]. In these heterostructure devices, graphene has been utilized as an effective electrode to reduce the contact resistance in 2D semiconductor devices due to its ultra-flat surface, high carrier mobility, and gate-tunable Fermi level. The diversity of 2D semiconductors has also enabled 2D heterostructures with multiple functionalities to meet various demands in applications [16][17][18][19][20][21].Modulation of 2D heterostructure properties is desired for their diverse applications. Defect engineering of materials, which can be achieved by irradiation of particles such as electrons or ions, provides an effective way to modulate properties of materials, as proven in silicon industry. Currently, diverse irradiation sources, including argon ions (Ar + ) [22,23] [22], and an improvement in electrical conductivity after a mild oxygen treatment in MoS 2 [32]. It has been shown that upon electron irradiation, 2D TMDs can be modified with vacancy defects and doped by filling the vacancies with impurity atoms [25], and graphene is also doped with electrons or holes depending on the irradiation energy [26]. So far these effects of irradiation have been mostly investigated in single 2D materials. Effects of irradiation on 2D heterostructures have yet to be well explored, and whether the build-up of 2D heterostructures could circumvent the degradation of the materials remains a question.In this work, we found that the build-up of heterostructures could partly hinder the degradation of the properties of monolayer MoS 2 against electron irradiation damage. By insertion of a monolayer graphene between MoS 2 and the substrate, the photoluminescence (PL) from MoS 2 /graphene heterostructure area is always stronger in intensity and more robust in energy under electron irradiation, in contrast to the dramatic PL shift in the MoS 2 monolayer area. The improvement is attributed to a blocking effect of graphene that prevents MoS 2 from being affected by the substrate. Raman spectra and electrical transfer properties were also investigated to systematically reveal the effect of electron irradiation on the MoS 2 /graphene heterostructure. Our work not only deepens the understanding of irradiation effects on 2D heterostructures, but also paves the way to the design of novel irradiation-resistant devices.Electron irradiation exists commonly in environments ranging from materials observation under electron mi-

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confidence: 99%

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Hong

Hou

et al. 2018

Sci. China Mater.

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“…For solid‐state bulk lasers in the near‐infrared range, our group fabricated 2D MoS 2 /graphene heterostructures by a monolayer interaction method and applied them in passively Q‐switched and mode‐locked solid‐state lasers, in which 0.94 GHz mode‐locked pulses with a pulse duration of 17.15 ps were achieved in a simple V‐type cavity . Chen's group realized graphene/WS 2 vdW heterostructure Q‐switching waveguide lasers operating at 1064 nm, and the shortest pulse width was determined to be 117 ns . Tu's group demonstrated a dual‐wavelength passively Q‐switched Yb:GAB laser by using a MoS 2 /graphene heterojunction, realizing a minimum pulse width of 370 ns and a single pulse energy of 0.743 µJ .…”

Section: All Solid‐state Pulsed Bulk Laser Generation With 2d Layeredmentioning

confidence: 99%

Recent Progress in 2D Material‐Based Saturable Absorbers for All Solid‐State Pulsed Bulk Lasers

Zhang

Liu

Wang

et al. 2019

Laser & Photonics Reviews

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141

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All solid‐state pulsed lasers (ASSPLs) play a significant role in the fields of medical, military, industry, and scientific research. Passive Q‐switching and mode‐locking are two of the most effective techniques for generating ASSPLs, in which a saturable absorber (SA) is the key element that has great impact on laser output parameters. Recently, 2D layered materials have been widely studied due to their intriguing properties. Their advantages of ultrafast dynamic processing, excellent nonlinear optical response, broadband operation, and easy fabrication and integration with lasers, enable them to be excellent SAs. Herein, the recent progress of ASSPLs with 2D layered material‐based SAs is reviewed, including a brief introduction of the fundamental characteristics, fabrication methods, characterization techniques of ultrafast dynamics, and nonlinear optical properties of 2D materials, design criteria of passively Q‐switched and mode‐locked bulk lasers, and their applications in ASSPLs. Finally, the potential developments and perspectives on 2D material‐based ASSPLs are also highlighted.

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“…For 2D van der Waals heterostructures, the interlayer coupling could be effectively manipulated by ion beam technique. The nonlinear optical response of graphene/WSe 2 heterostructure before and after ion irradiation was systematically studied by Tan et al [69]. The C 3+ (carbon) ion irradiation was employed with a fluence of 10 12 -10 13 ions cm −2 .…”

Section: Introductionmentioning

confidence: 99%

Low-dimensional materials as saturable absorbers for pulsed waveguide lasers

Pang

et al. 2020

J. Phys. Photonics

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Low-dimensional (LD) materials, such as 2D materials, carbon nanotubes, and nanoparticles, have attracted increasing attention for light modulation in photonics and optoelectronics. The high nonlinearity, broad bandwidth, and fast response enabled by LD materials are critical to realize desired functionalities in highly integrated photonic systems. Driven by the growing demand for compact laser sources, LD materials have recently demonstrated their great capacity as saturable absorbers in pulsed (Q-switched or mode-locked) laser generation in waveguide platforms. We review the recent advances of pulsed waveguide lasers based on LD materials. A perspective is also presented in this rapidly growing research field. Fundamentals of LD saturable absorbers and optical waveguidesOwing to the diverse electronic structures, LD materials offer versatile options to realize wide applications based on the nonlinear optical response. Currently, semiconductor saturable absorber mirrors (SESAMs) are the most frequently used commercial SAs, processing high damage threshold and prominent stability. However, a variety of LD materials retain a number of advantages to be nonlinear SAs, of which SESAMs © 2020 The Author(s). Published by IOP Publishing Ltd J. Phys. Photonics 2 (2020) 031001 Z Li et al cannot fulfill, such as broadband operation, ultrafast recovery time, low cost, and better compatibility with compact devices such as fibers and waveguides. Recently, an increasing number of research efforts have been made to unfold the nonlinear optical properties as well as its corresponding applications of the emerging LD materials [14][15][16][17][18][19][20][21][22][23]. For semiconducting or semimetallic LD materials, the main mechanism for nonlinear saturable absorption is Pauli blocking. After photoexcitation, non-equilibrium carrier state could be created, in which valence-band electrons can be excited to the conduction band, and a hole can be formed on the valence band. As the increase of the incident light intensity, the photon absorption processes of LD materials experience a transition from linear absorption to saturable absorption. When the light intensity continues increasing and reaches the saturation intensity, the extra photons will no longer be absorbed by the electrons in the valence band, and the transmittance of the SA will not increase but gradually tend to a stable value. For metallic nanoparticles, the dominant mechanism is the LSPR effect arising from the interaction between the electric field of incident light and the surface electrons in the conduction band. The optical nonlinearity could be significantly enhanced while maintaining the ultrafast recovery time. These nonlinear effects are widely used in passively Q-switched or mode-locked lasers. In order to characterize the nonlinear optical properties, femtosecond Z-scan spectroscopy is typically employed by moving the sample along the Z direction through a focused Gaussian beam. The laser intensity can be varied continuously with the maximum at the focal poin...

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Tuning of Interlayer Coupling in Large-Area Graphene/WSe₂ van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications

Cited by 80 publications

References 44 publications

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Recent Progress in 2D Material‐Based Saturable Absorbers for All Solid‐State Pulsed Bulk Lasers

Low-dimensional materials as saturable absorbers for pulsed waveguide lasers

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Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications

Cited by 80 publications

References 44 publications

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation

Recent Progress in 2D Material‐Based Saturable Absorbers for All Solid‐State Pulsed Bulk Lasers

Low-dimensional materials as saturable absorbers for pulsed waveguide lasers

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Tuning of Interlayer Coupling in Large-Area Graphene/WSe₂ van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications