Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation

Nickel-Silicide Contact Technology With Dual Near-Band-Edge Barrier Heights and Integration in CMOS FinFETs With Single Mask

“…By choosing a higher dose for Al than for S in p-FinFETs, its barrier-height tuning effect overwhelms that of S. This effectively lowers the hole barrier height Φ p B [12], [13]. S in n-FinFETs lowers the Φ n B , which is consistent with other reports [14]- [18]. This work enables a simple and cost-effective integration scheme wherein the Schottky barrier height of NiSi can be independently adjusted to reduce R C and increase I DSAT in both p-and n-FETs.…”

The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

“…Aluminum (Al) and palladium silicide (PdSi) have become the most widely used small area rectifier contact onto Si [1][2][3][4][5][6] instead of platinum silicide (PtSi) in recently [7][8][9]. Since, PtSi contacts suffer from a number of processing difficulties associated with the Pt due to its high melting temperature.…”

Impact of a Germanium and Carbon Preamorphization Implant on the Electrical Characteristics of NiSi/Si Contacts With a Presilicide Sulfur Implant

“…The optimized implantation conditions of each species were selected based on prior reports [6], [7], [11], [12]. The Ge-implant condition was chosen to ensure that the amorphous layer is completely consumed within NiSi to avoid any residual EOR layer at the NiSi/Si interface.…”