2010
DOI: 10.1039/c0jm00196a
|View full text |Cite
|
Sign up to set email alerts
|

Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

2
10
0

Year Published

2011
2011
2023
2023

Publication Types

Select...
6
1
1

Relationship

0
8

Authors

Journals

citations
Cited by 21 publications
(12 citation statements)
references
References 36 publications
2
10
0
Order By: Relevance
“…To our knowledge, this result presents one of the best results of pentacene OTFTs to date. 16,23,24 A threshold voltage is lower than −0.5 V, and a subthreshold swing is about 130 mV/decade calculated from the transfer curve. This subthreshold swing yields a low interface trap density of 2.40 × 10 11 cm −2 , indicating a high quality interface between the pentacene film and the PAA dielectric layer.…”
Section: ■ Results and Discussionmentioning
confidence: 76%
See 1 more Smart Citation
“…To our knowledge, this result presents one of the best results of pentacene OTFTs to date. 16,23,24 A threshold voltage is lower than −0.5 V, and a subthreshold swing is about 130 mV/decade calculated from the transfer curve. This subthreshold swing yields a low interface trap density of 2.40 × 10 11 cm −2 , indicating a high quality interface between the pentacene film and the PAA dielectric layer.…”
Section: ■ Results and Discussionmentioning
confidence: 76%
“…There is only a small decrease of 10.8% in the estimation of device mobility when the capacitance value at a frequency of 20 Hz is used, corroborating the outstanding device performance. To our knowledge, this result presents one of the best results of pentacene OTFTs to date. ,, A threshold voltage is lower than −0.5 V, and a subthreshold swing is about 130 mV/decade calculated from the transfer curve. This subthreshold swing yields a low interface trap density of 2.40 × 10 11 cm –2 , indicating a high quality interface between the pentacene film and the PAA dielectric layer .…”
Section: Resultsmentioning
confidence: 84%
“…However, Bae's group found the higher mobility on the higher‐γ S dielectric . In addition, some groups reached a different conclusion that the matched γ S of the dielectric to that of the semiconductor is favorable for the improved mobility . These inconsistent reports exhibit that the relationship between the total surface energy of dielectric and mobility is still unclear.…”
Section: Resultsmentioning
confidence: 99%
“…9 So far, apart from single crystals, OTFTs with the best charge carrier transport properties have been fabricated using the VTE technique. 7,8 However, the waste of organic material is significant and the uniformity of the thin film is poor due to the point source used in the conventional VTE technique. Several kinds of evaporation sources, including linear source and area source, have been developed to improve the deposition rate, lower the material waste, and make the uniformity better.…”
Section: Introductionmentioning
confidence: 99%