Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

Manojreddy, Poreddy; Itapu, Srikanth; Ravali, Jammalamadaka Krishna; Selvendran, S.

doi:10.3390/condmat6020021

Cited by 8 publications

(5 citation statements)

References 46 publications

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“…Metal complex inks, also referred to as metal precursor inks or metal particle-free inks, are garnering significant interest due to their notable features, including simplicity in synthesis, low viscosity, and the absence of aggregation during preparation and storage. The choice of Cu complex ink over other metal complex inks for the recycling process in this study was motivated by its advantageous attributes: high conductivity, lower sintering temperature, cost-effectiveness, compatibility with flexible substrates, and its recent popularity in flexible printed electronics. − The recycling of Cu complex ink waste was attempted in a similar way to that for the NiO x NP ink using various solvents, including the same solvent as the initial ink solvent (ethanolamine/ethanol with a volume ratio of 1:2) for the washing step, as shown in Figure i–iv. Metallic Cu electrode patterns were successfully generated by the LDP process.…”

Section: Resultsmentioning

confidence: 99%

“…So far, we have demonstrated the recyclability of NiO x NP ink for the purpose of creating Ni electrodes through laser-induced reductive sintering. However, in certain cases, extracting pure NiO x NPs (excluding solvents and additives) from NiO x NP ink may be necessary because NiO x itself is a semiconductor possessing unique electronic properties that can be utilized in various applications, such as p-type thin-film transistors, , hole injection/transport layers in organic light-emitting devices, , solar cells, , and physicochemical sensors. , To separate pure NiO x NPs from the NP ink waste, the waste underwent a washing process involving five rounds of ethanol addition followed by centrifugation at 3500 rpm for 15 min. The removal of PVP and CTAB was confirmed through FTIR measurements, which explored their binding conditions with NiO x NPs.…”

Section: Resultsmentioning

confidence: 99%

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Recycling of Nanomaterial Ink Waste for Laser Digital Patterning Process

Binh Nam,

Kim,

Lee

2024

ACS Sustainable Chem. Eng.

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The laser digital patterning (LDP) process, also known as laser direct writing or laser selective patterning, offers a facile route to fabricating flexible/stretchable electronic devices from solution-processed thin films. Despite their various benefits, the deposition and washing steps associated with solution-processed thin films, specifically when using nanoinks such as nanoparticle (NP) ink and complex ink, inevitably produce nanomaterial waste. To address this issue, we propose a rapid and straightforward recycling process to reuse nanomaterial waste in the LDP process. The recycling process was demonstrated by retrieving NiO x NP ink waste generated during spin-coating and washing steps. Various solvents were utilized to retrieve and regenerate the nanoink. Remarkably, a recovery efficiency of over 90% was achieved for the NiO x NP ink even after multiple cycles. Comprehensive characterization was conducted on the recycled NP ink, comparing it with the originally synthesized NP ink using diverse analytical techniques. We also verified that the performance of the Ni electrode-based flexible heater manufactured using the recycled NiO x NP ink is nearly identical to that using the as-synthesized NP ink without any degradation. Additionally, we assessed the recyclability of Cu complex ink to determine which type of nanoink is more advantageous concerning material recycling for the LDP process. Our findings confirm that adopting NP ink presents an effective and sustainable strategy for diminishing nanomaterial waste during the LDP process.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Recycling of Nanomaterial Ink Waste for Laser Digital Patterning Process

Binh Nam,

Kim,

Lee

2024

ACS Sustainable Chem. Eng.

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“…[16] (Fig. 2) 이후 p-type NiO 박막 합성을 위한 Solution process [18,32,33,35,36] , sputtering법 [34,37,55] 공정은 활발히 연구된 반면, p-type 트랜지스터 타겟의 NiO 박막의 화학 기상 증착법은 2016년 이후 거의 보고 되지 않았다. 2016년 Zhu et al [30] 은 Solution process 작한 결과 또한 보고하였다.…”

Section: 서론unclassified

“…4) NiO 박막 트랜지스터 성 능을 향상시키기 위해 사용될 수 있는 후처리 방법은 열 처리, 플라즈마 처리, passivation 및 light irradiation 을 제시할 수 있다. 2021년에 laser irradiation을 통해 소자 성능향상을 보고한 논문 [37] 을 제외하면 2016년 이 후 보고된 후처리 연구결과가 매우 부족한 단계다. 아울 러 SnO 및 CuO x 대비 NiO 박막의 화학 기상 증착법 연…”

Section: 서론unclassified

Recent progress of the p-type oxide thin films for transistor applications: Nickel oxide, Tin oxide, and Copper oxide

Choe¹,

Jeon²,

Hwang³

et al. 2023

Ceramist

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Over the past decade, many research groups have been striving to develop high-performance p-type switching oxide materials for implementing complementary metal–oxide–semiconductor (CMOS) thin film devices. However, realizing p-type oxide thin film transistors (TFTs) whose electrical properties are comparable to n-type oxide TFTs has been challenging. This is because of inherent characteristics of p-type oxide materials such as the high formation energy of native acceptors and high hole effective mass caused by localized hole transport path. Developing a p-type oxide with a delocalized hole transport pathway and low hole formation energy is crucial for the production of CMOS circuits utilizing oxide thin films. NiO, SnO, and CuO<sub>x</sub> are being actively studied as candidate materials that satisfy these requirements. This review discusses the latest advances in the synthesis method of p-type binary oxide thin films and the approach for electrical performance enhancement.

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“…In 2018, Hu et al fabricated highperformance inkjet-printed Al 2 O 3 via high-dielectric-constant NiO Thin-Film transistors using sol-gel precursor inks [59]. The best switching performance was obtained with an on/off current ratio of 5.3 × 10 4 on a 50 nm thick Al 2 O 3 dielectric layer with an annealing temperature of 280 • C. In 2021, Manojreddy et al used laser irradiation as a potential technique for tuning the electrical properties of NiO x /SiO 2 Thin-Film transistors, optimizing the laser fluence and the number of laser pulses [60]. TFT performance was evaluated in terms of mobility, threshold voltage, on/off current ratio, and subthreshold swing.…”

Section: Research Status Of P-type Nio Tftsmentioning

confidence: 99%

Research Progress of p-Type Oxide Thin-Film Transistors

et al. 2022

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The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

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Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

Cited by 8 publications

References 46 publications

Recycling of Nanomaterial Ink Waste for Laser Digital Patterning Process

Recycling of Nanomaterial Ink Waste for Laser Digital Patterning Process

Recent progress of the p-type oxide thin films for transistor applications: Nickel oxide, Tin oxide, and Copper oxide

Research Progress of p-Type Oxide Thin-Film Transistors

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