Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrO_x composite

Abstract

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

Distributed Feedback Lasers Based on Green Fluorescent Protein and Conformal High Refractive Index Oxide Layers

“…Two precursors, tetrakis(dimethylamino)zirconium (Pegasus Chemicals) and water, were alternatingly purged into the reaction chamber at a deposition temperature of 100 °C. [26] Under these conditions, ZrO 2 grew at a rate of 55 Å h -1 . A combination of ellipsometry and profilometer measurements was used to determine the refractive index (n = 2.12) and thickness (65 nm) of the deposited ZrO 2 layer.…”

Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor

“…While numerous research attempts in exploring high dielectric constant ( k ) metal oxides were proposed as the remedy to conventional silicon dioxide (SiO 2 ), in order to circumvent the leakage current issue endured by the relatively thinner SiO 2 , aluminum oxide (Al 2 O 3 ) and zirconium oxide (ZrO 2 ) have stood out from the crowd to be the promising metal oxides worth for further investigation. Zirconium oxide although exhibits a high k value in the range of 20 to 25, 1 large band gap (5‐8 eV), 2,3 and good thermal stability, continuous breakthrough was hampered by its low crystallization temperature (500°C) 3‐5 . The ease of crystallization in ZrO 2 on the other hand was giving con as a high k metal oxide, owing to the formation of grain boundaries, which would serve as a leakage current path 5 .…”

“…Key findings deduced from the previous work were mainly focusing on phase transformation from amorphous to crystalline phase or from one crystalline phase to another phase. The attempt to relate the above circumstances with metal‐oxide‐semiconductor (MOS) characteristics brought by the mixed oxide with respect to ZrO 2 remains scarce until the recent discovery about the formation of ternary ZrAlO x as the high k metal oxide for thin‐film transistors (TFTs) 1‐3 …”

“…The attempt to relate the above circumstances with metal-oxide-semiconductor (MOS) characteristics brought by the mixed oxide with respect to ZrO 2 remains scarce until the recent discovery about the formation of ternary ZrAlO x as the high k metal oxide for thin-film transistors (TFTs). [1][2][3] The deployment of ternary AlZrO x in TFTs has been studied mainly in the aspect of electrical performance to serve as a high k gate insulator. A smaller hysteresis (0.2 V) was perceived by 170 nm thick amorphous AlZrO x film atomic layer deposited for semiconducting single-walled carbon nanotube TFTs.…”

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

“…Meanwhile, sc‐SWCNTs also offer some unique advantages, such as high carrier mobility, high chemical and physical stability, good solubility, flexibility, and low process temperatures . However, most sc‐SWCNT TFTs, especially if they are solution‐processed or printed, exhibit only p‐type behaviors in the air because of the adsorption of oxygen, water, solvent molecules, and other impurities . Compared with inverters made of all p‐type or all n‐type transistors, the inverters consisting of both n‐type and p‐type transistors (CMOS inverter) have higher voltage gains, larger noise margins, and lower static power dissipation, which are useful for large‐scale device integration .…”