Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

Hsu, T. M.; Lan, Yuemei; Chang, Wen‐Hao; Yeh, Nien Tze; Chyi, Jen Inn

doi:10.1063/1.125863

Cited by 82 publications

(41 citation statements)

References 13 publications

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“…This is due to a fast Ga outdiffusion has been shown that the three-dimensional character of into the SiO 2 layer during thermal annealing [25]. Those the QDs confinement potential could be retained even Ga vacancies diffuse into the QDs region during RTA, after RTA at a relatively high temperature (30 s at 900 enhancing the In/Ga interdiffusion through a dot/cap°C [5] or at 950 °C [14] and 60 s [13] at 900 TC). In interface [12,13].…”

Section: Qdsmentioning

confidence: 99%

“…The structure investigated was grown by metaloorganrapid thermal annealing (RTA) system with Si0 2 capic vapor phase epitaxy in the Institute of Experimental ping [5,9,[12][13][14] or proximity capping, (which means ic v arpas epity The Gnstiut e oEx erieal an annealing with a piece of GaAs substrate in close Physics, Warsaw University. The GaAs buffer layer was proximity to the sample surface) [3,6,7].…”

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confidence: 99%

“…In this paper, the results of the effect of RTA on InAs/GaAs QDs with GaAs One of the ways of tuning the properties of semiconproximity capping are presented and discussed [17]. ductor quantum dots (QDs) [1,2] is their postgrowth thermal treatment [3][4][5][6][7][8][9][10][11][12][13][14][15]. The postgrowth annealing is 2.…”

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Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots

Babiński

Jasiński

2002

Thin Solid Films

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Section: Qdsmentioning

confidence: 99%

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confidence: 99%

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Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots

Babiński

Jasiński

2002

Thin Solid Films

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“…2,3,5 We believe that the averaging of the Ge concentration among islands in different layers is one of the main reasons contributing to the narrowing of the PL peaks.…”

Section: Fig 2 ͑A͒mentioning

confidence: 99%

“…1 Photoluminescence ͑PL͒ investigations suggest blueshift in the interband energy and narrowing of the PL linewidth after thermal annealing. [2][3][4] Although the reasons for this shift have been investigated from a microstructural point of view, 5,6 little attention has been paid to the effects of thermal annealing on compositional change within QDs. This letter reports an energy-filtering transmission electron microscopy ͑TEM͒ study of the effects of annealing on QD stacks.…”

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Annealing effects on the microstructure of Ge/Si(001) quantum dots

Liao

Zou

Cockayne

et al. 2001

Applied Physics Letters

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Photoluminescence and AFM Studies on Blue Shifted InAs/AlyGa1?yAs Quantum Dots

Duijs

Findeis

Zrenner

et al. 2001

phys. stat. sol. (b)

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Photoluminescence and structural properties of self-assembled InAs quantum dots, grown on Al y Ga 1--y As, are studied for y = 0, 0.3, and 0.5. A maximum blue shift of 150 meV for the ground state emission energy is determined with increasing y for the samples as grown. Increased surface density and size inhomogeneity is observed for growth on AlGaAs compared to growth on GaAs. Rapid thermal annealing at temperatures ranging from 550 to 850 C is used to further increase the ground state emission energy with respect to the as grown samples. We find a shift up to a maximum emission energy of 1.9 eV for InAs quantum dots (QDs) embedded in Al 0.3 Ga 0.7 As compared to 1.4 eV for GaAs matrix material. To combine the higher spectral shift by annealing for InAs QDs embedded in AlGaAs with the lower dot density for the growth on GaAs, favored for single dot spectroscopy, we investigated InAs QDs grown on AlGaAs separated by 2 ML GaAs. For these samples we observe a maximum shift by annealing up 1.4 eV and intense room temperature PL.Self assembled quantum dots (QDs) are of fundamental interest in modern semiconductor physics. Their unique properties are interesting for applications like QD lasers [1], more future concepts like charge storage devices [2] as well as for basic research. Isolated QDs show optical line spectra [4] and are often referred to as artificial atoms. Main properties of the QDs, like emission energy or shell splitting, can be tuned by parameters of the growth process or even post growth. For many optical experiments on QDs it is important to shift the room temperature emission energy up in the region of 1.3 to 1.7 eV, where sensitive Si-detectors and tunable Ti:sapphire laser work. In the field of single dot spectroscopy low surface density of the QDs is desired simultaneously.By changing the material composition of the QDs from InAs to InGaAs on GaAs we reach a ground state emission energy of 1.3 eV at low temperatures in a region of low dot density [5]. To further increase the emission energy of InAs QDs, Al y Ga 1--y As has been used as matrix material [6,7] instead of GaAs by various groups. The room temperature ground state emission energy can be shifted up to 1.6 eV but only for high y-content of y = 0.8-1.0. This high Al content results in a strongly increased dot density, of about 1 Â 10 11 cm --2 , unsuitable for single dot spectroscopy with near field shadow masks. Post growth rapid thermal annealing (RTA) has also been used by various groups to increase the QD photoluminescence (PL) energy [8][9][10][11]. They observe a blue shift up to the energy of the wetting layer (1.4 eV) after RTA accompanied by a narrowing of the inhomogeneously broadened line width for an ensemble of InAs QDs.Here we investigate the optical and structural properties of InAs QDs embedded in 1 ) Corresponding author; GaAs compared to Al y Ga 1--y As and the influence of rapid thermal annealing. To maintain the relatively low dot density on GaAs and simultaneously increasing the band gap by using Al y Ga 1--y As matri...

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Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

Cited by 82 publications

References 13 publications

Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots

Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots

Annealing effects on the microstructure of Ge/Si(001) quantum dots

Photoluminescence and AFM Studies on Blue Shifted InAs/AlyGa1?yAs Quantum Dots

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