Tuning the spin caloritronic transport properties of InSe monolayers <i>via</i> transition metal doping

Huang, Jing; Zhu, Ying; Xie, Rong; Hu, Yujie; Li, Shujuan; Lei, Shulai; Li, Qunxiang

doi:10.1039/d2nj02635j

Cited by 3 publications

(2 citation statements)

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“…Experimental investigations about the traditional thermoelectric materials mainly focused on inorganic compounds, such as Bi 2 Te 3, [ 5 ] PbTe, [ 6 ] SnSe, [ 7 ] and InSe. [ 8 ] Note that, these materials are usually expensive, toxic or rigid, which are limited in use for wearable and implantable electronics. Consequently, it is urgent and highly desired in the rational design of high energy conversion efficiency thermoelectric materials with low cost, environmental friendliness, and high flexibility.…”

Section: Introductionmentioning

confidence: 99%

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High thermoelectric figure of merit in rhombic porous carbon nitride nanoribbons

Wang

Yang

2022

J Chinese Chemical Soc

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By performing extensive density functional theory calculations combined with non‐equilibrium Green's function technique, we predict the rhombic porous carbon nitride nanoribbon (rPCNNR) and the vertical rPCNNR junction exhibiting high thermoelectric figure of merit (ZT) values of 0.57 and 2.1 at room temperature respectively. Theoretical results reveal that the ZT value of rPCNNR is significantly larger than that of armchair graphene nanoribbon with the almost same width (~0.035) due to the large Seebeck coefficients and the significantly decreased thermal conductance of rPCNNR, where the phonon states are blocked by the built‐in porous structure and rhombic edge in rPCNNR. The ZT value is further enhanced to be 2.1 in the vertical rPCNNR junction, which is achieved by the synergy effect between the dramatically suppressed thermal conductance in in‐plane direction due to the weak van der Waals interaction between two rPCNNRs, the almost unchanged Seebeck coefficients, and the good electron conductivity provided by the strong overlapping of delocalized VB‐ and CB‐derived states in the scattering region. These presented findings highlight rPCNNR as a promising candidate in building flexible devices with high thermoelectric performance.

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Section: Introductionmentioning

confidence: 99%

“…InSe. [8] Note that, these materials are usually expensive, toxic or rigid, which are limited in use for wearable and implantable electronics. Consequently, it is urgent and highly desired in the rational design of high energy conversion efficiency thermoelectric materials with low cost, environmental friendliness, and high flexibility.…”

Section: Introductionmentioning

confidence: 99%