Tuning the thermoelectric properties by manipulating copper in Cu2SnSe3 system

Abstract

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Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system

“…However, there is a variation in the coefficient of n values which could be due to the anisotropic nature of samples (Bi 1-x In x ) 2 Se 2.7 Te 0.3 . The probable reason for deviation in Hall measurements may be attributed to rapid drop of resistance of four thermal in the direction of high mobility by collective anisotropic orientation, which is a main challenge to measure the precise values of mobility and carrier concentration simultaneously and can be considered as limiting factor for experimental and theoretical deviations [60,61]. The localization of electron-electron interaction causes co-occurrence of degenerated bulk thermally activated layers with high experimental mobility value in Bi 2 Se 3 (21.7 9 10 -4 m 2 /Vs), whereas (Bi 0.96 In 0.04 ) 2 Se 2.7 Te 0.3 has 1/7 ratio of experimental and theoretical Hall mobility which is due to the increase in the doping density with hopping conduction by small polarons, which resulted in a discrepancy of theoretical Hall mobility values.…”

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

“…The electrons in a preliminary localized state get sufficient thermal energy to hop to the closest localized state [51]. When the internal microscopic disorder is high, tunneling of electrons between the nearest sites is also energetically unfavorable [52]. The electrical resistivity in the VRH model is expressed as…”

High Thermoelectric Performance in Earth‐Abundant Cu3SbS4 by Promoting Doping Efficiency via Rational Vacancy Design

“…Like other ternary semiconductors, Cu 3 SbS 4 possesses both low valence cation Cu + and high valence cation Sb 5+ (Figure S12, Supporting Information). [23,24] Although Cu vacancies are capable of providing extra holes in p-type Cu 3 SbS 4 as verified in many Cu-based ternary compounds, [25][26][27] the negative effect of Cu vacancy on carrier mobility is noticeable as the top of valence band is mainly contributed by the atomic orbitals from Cu and anion atoms. In this work, we demonstrate high efficiency doping can be realized in Cu 3 SbS 4 , which holds strong chemical bond between sulfur atom and cation atoms.…”