1994
DOI: 10.1016/0168-9002(94)90879-6
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Tunnel junction arrays on InSb: A high resolution cryogenic detector for X- and γ-rays

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Cited by 17 publications
(9 citation statements)
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“…The phonons produced by particle impacts are absorbed in the STJ sensors on the surface and measured as a tunneling current pulse. Detector sizes ranging from a few mm 2 to 1 cm 2 have been realized with charge pulse rise times ranging from 10 to 100 ms (Goldie et al, 1994;Gaitskell et al, 1996;Kurakado et al, 1997).…”
Section: Increasing the Size Of Individual Detector Pixelsmentioning
confidence: 99%
“…The phonons produced by particle impacts are absorbed in the STJ sensors on the surface and measured as a tunneling current pulse. Detector sizes ranging from a few mm 2 to 1 cm 2 have been realized with charge pulse rise times ranging from 10 to 100 ms (Goldie et al, 1994;Gaitskell et al, 1996;Kurakado et al, 1997).…”
Section: Increasing the Size Of Individual Detector Pixelsmentioning
confidence: 99%
“…Since InSb is a direct-gap semiconductor most of the electron-hole pairs recombine on a time scale of order 20 ms with the release of more phonons. The subsequent nonequilibrium phonon populations are measured by series arrays of superconducting tunnel junctions (STJs) fabricated on the surface of each crystal [14]. The measured energy release is the sum of the energies deposited in the two crystals.…”
mentioning
confidence: 99%
“…Another aspect of the larger area coverage is that the statistical precision is improved because more phonons are directly detected. An example of the performance of such a detector, in this case with a 2-mm thick InSb crystal, is shown in Figure 15 (142). A thin layer of SiO is used to separate the SASTJ from the crystal surface because InSb is electrically conducting at low temperatures.…”
Section: Phonon Detection With Stj Arraysmentioning
confidence: 99%