Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver

Koerner, Roman; Fischer, I. A.; Soref, Richard A.; Schwarz, Daniel; Clausen, Caterina J.; Hanel, L. A.; Oehme, Michael; Schulze, J.

doi:10.1109/iedm.2017.8268453

Cited by 3 publications

(1 citation statement)

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“…46 One plan for creating a Si-based Group IV 8 × 8 SOA matrix for the 1520 nm-1620 nm telecom wavelength range is to introduce a Ge gain layer within a layered channel-waveguided p-Si/p-Ge/nGe/i-Ge/p-Si amplifier structure featuring forward-biased PN Ge Zener tunnel-diode electron injection and reverse-biased PIN hole injection. [47][48][49] Switching speeds of 1 ns or less are projected for those structures. Here the connecting waveguides would be undoped Si in SOI, with switch layouts discussed earlier.…”

Section: Semiconductor Optical Amplifiers-soasmentioning

confidence: 99%

Tutorial: Integrated-photonic switching structures

Soref

2018

APL Photonics

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Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable “mesh” switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ∼1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

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