Tunneling between two-dimensional electron layers with correlated disorder: Anomalous sensitivity to spin-orbit coupling

Zyuzin, Vladimir A.; Mishchenko, E. G.; Raǐkh, M. É.

doi:10.1103/physrevb.74.205322

Cited by 9 publications

(12 citation statements)

References 21 publications

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“…The result is in agreement with that derived in Ref. 10, taken for an uncorrelated spatial arrangement of the impurities. As we have already noted, the interlayer correlator B should be neglected because parametrically it has higher order of tunneling overlap integral t than the intralayer correlator A ͓Eq.…”

Section: B Spin-orbit Interaction Of Rashba Typesupporting

confidence: 92%

“…In the method used here, this result appears quite naturally; however, it can be similarly traced in the diagrammatic technique used in Ref. 10. For the same reason, the tunneling term is to be dropped from Eq.…”

Section: ͑8͒mentioning

confidence: 77%

“…9, it was pointed out that this restriction can also be eliminated if Rashba parameters are different for the two layers. A structure design was proposed 10 where exactly opposite values of the Rashba parameters result from the builtin electric field in the left layer being opposite to that in the right layer. Because the SOI of Rashba type is proportional to the electric field, this would result in ␣ R =−␣ L , where ␣ L and ␣ R are the Rashba parameters for the left and right layers, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Manifestation of spin-orbit interaction in tunneling between two-dimensional electron layers

Rozhansky

Аверкиев

2008

Phys. Rev. B

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An influence of spin-orbit interaction on the tunneling between two two-dimensional electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without scattering of the electrons, the tunneling conductance can either exhibit resonances at certain voltage values or be substantially suppressed over the whole voltage range. The dependence of the conductance on voltage turns out to be very sensitive to the relation between Rashba and Dresselhaus contributions even in the absence of magnetic field. The elastic scattering broadens the resonances in the first case and restores the conductance to a larger magnitude in the latter one. These effects open the possibility to determine the parameters of spin-orbit interaction and electron scattering time in tunneling experiments with no necessity of external magnetic field.

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Section: B Spin-orbit Interaction Of Rashba Typesupporting

confidence: 92%

Section: ͑8͒mentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

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Manifestation of spin-orbit interaction in tunneling between two-dimensional electron layers

Rozhansky

Аверкиев

2008

Phys. Rev. B

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“…Among systems with locally broken inversion symmetry, we consider a symmetric double-quantum-well structure (DQWS) [16,[19][20][21][22][23][24][25][26][27][28] (illustrated in Fig. 1) in which electronic states can be controlled by changing the composition and the width of the well and barrier layers and by varying the potential with use of the applied electric field and the doping.…”

Section: Introductionmentioning

confidence: 99%

D'yakonov-Perel' spin relaxation in a bilayer with local structural inversion asymmetry

Hayashida

Akera

2020

Phys. Rev. B

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The spin relaxation in the D'yakonov-Perel' mechanism is theoretically studied in a symmetric doublequantum-well structure (DQWS) with an intersubband spin-orbit interaction (SOI) due to the local structural inversion asymmetry and the linear-in-wave-number Dresselhaus SOI. It is found that the spin relaxation rate induced by the intersubband SOI exhibits a suppression with ωτ p in the Lorentzian form of (1 + ω 2 τ 2 p ) −1 , wherē hω is the intersubband energy separation and τ p is the momentum relaxation time. The present Lorentzian suppression leads to a crossover with increasing ωτ p from the D'yakonov-Perel'-type relaxation (the spin relaxation time τ s ∝ τ −1 p ) to the Elliott-Yafet-type relaxation (τ s ∝ τ p ). It is also shown that the spin relaxation rate in the presence of both the linear Dresselhaus SOI and the intersubband SOI is isotropic with respect to the in-plane spin direction in the present DQWS in contrast to a single quantum well exhibiting an in-plane anisotropy.

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“…when the spin-orbit splitting is exactly compensated by an external bias. It was demonstrated theoretically that in this way SOI would manifest itself in the tunnel conductance with two resonant peaks or more complex pattern with typical features shifted from zero bias by a characteristic energy of the spin-orbit splitting 4,5 . For exactly the same 2D layers the tunneling between opposite spin-orbit subbands (assuming no spinflip during the tunneling) would be forbidden because of the orthogonality of the spin wavefunctions.…”

Section: Introductionmentioning

confidence: 99%

Resonant 2D-2D tunneling with account for spin-orbit interaction

Rozhansky,

Averkiev,

Lähderanta

2015

Preprint

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We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a complex pattern in the tunneling characteristic with typical features corresponding to SOI energy. For this manifestation of SOI to be observed experimentally the characteristic energy should exceed the resonant broadening related to the particles quantum lifetime in the layers. We perform an accurate analysis of the known experimental data on electron and hole 2D-2D tunneling in AlGaAs/GaAs heterostructures. It appears that for the electron tunneling the manifestation of SOI is difficult to observe, but for the holes tunneling the parameters of the real structures used in the experiments are very close to those required by the resolution criteria. We also consider a new promising candidate for the effect to be observed, that is p-doped SiGe strained heterostructures. The reported parameters of cubic Rashba SOI and quantum lifetime in strained Ge QWs fabricated up to date already match the criteria for observing SOI in 2D-2D heavy holes tunneling. As supported by our calculations small adjustments of the parameters for AlGaAs/GaAs p-type QWs or simply designing a 2D-2D tunneling experiment for SiGe case are very likely to reveal the SOI features in the 2D-2D tunneling.

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Tunneling between two-dimensional electron layers with correlated disorder: Anomalous sensitivity to spin-orbit coupling

Cited by 9 publications

References 21 publications

Manifestation of spin-orbit interaction in tunneling between two-dimensional electron layers

Manifestation of spin-orbit interaction in tunneling between two-dimensional electron layers

D'yakonov-Perel' spin relaxation in a bilayer with local structural inversion asymmetry

Resonant 2D-2D tunneling with account for spin-orbit interaction

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