Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs

Lu, Chung-Chin; Chang‐Liao, Kuei‐Shu; Lu, Chueng-He; Chang, Shih-Cheng; Wang, Tien-Ko; Hou, Fu-Chung; Hsu, Yao-Tung

doi:10.1016/j.microrel.2011.04.021

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…1.c, consisting of the measured equivalent parallel conductance (G m ) and measured capacitance (C m ). Assuming negligible series resistance [14] - [15],…”

Section: Theoratical Analysismentioning

confidence: 99%

Analysis of Interface Trap Densities for Al2O3 Dielectric Material Based Ultra Thin MOS Devices

Maity

Thakur

Maity

et al. 2016

AMM

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In this paper the interface trap densities (Dit) are analyzed for ultra thin dielectric material based metal oxide semiconductor (MOS) devices using high-k dielectric material Al2O3. The Dit have been calculated by a novel approach using conductance method and it indicates that by reducing the thickness of the oxide, the Dit increases and similar increase is also found by replacing SiO2 with Al2O3. For the same oxide thickness SiO2 has the lowest Dit and found to be the order of 1011 cm-2eV-1. The Dit is found to be in good agreement with published fabrication results at p-type doping level of 1 × 1017 cm-3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

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“…1.c, consisting of the measured equivalent parallel conductance (G m ) and measured capacitance (C m ). Assuming negligible series resistance [14] - [15],…”

Section: Theoratical Analysismentioning

confidence: 99%

Analysis of Interface Trap Densities for Al2O3 Dielectric Material Based Ultra Thin MOS Devices

Maity

Thakur

Maity

et al. 2016

AMM

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“…As such, the need to better understand these defects became extremely important. One methodology that became popular for this purpose is frequency dependent charge pumping (FD-CP) as a tool for profiling bulk defect spatial distributions [2][3][4][5][6][7][8][9][10][11][12]. FD-CP is thought to have a well-defined relationship between charge pumping (CP) frequency and physical defect depth in the gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

Frequency dependent charge pumping — A defect depth profiling tool?

Ryan

Southwick

Campbell

et al. 2012

2012 IEEE International Integrated Reliability Workshop Final Report

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We investigate the validity of using frequencydependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than its actual physical depth, and (2) only a fraction of detrapping charge may contribute to the CP current (I CP ) resulting in analysis errors. Thus, the relationship between frequency and defect depth is much more complex than what has been previously reported.

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Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer

Ruan

Chang‐Liao

et al. 2015

Microelectronic Engineering

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Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs

Cited by 6 publications

References 8 publications

Analysis of Interface Trap Densities for Al<sub>2</sub>O<sub>3</sub> Dielectric Material Based Ultra Thin MOS Devices

Analysis of Interface Trap Densities for Al<sub>2</sub>O<sub>3</sub> Dielectric Material Based Ultra Thin MOS Devices

Frequency dependent charge pumping — A defect depth profiling tool?

Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer

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Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs

Cited by 6 publications

References 8 publications

Analysis of Interface Trap Densities for Al<sub>2</sub>O<sub>3</sub> Dielectric Material Based Ultra Thin MOS Devices

Analysis of Interface Trap Densities for Al<sub>2</sub>O<sub>3</sub> Dielectric Material Based Ultra Thin MOS Devices

Frequency dependent charge pumping &#x2014; A defect depth profiling tool?

Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer

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Frequency dependent charge pumping — A defect depth profiling tool?