Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer

Ruan, Dun-Bao; Chang‐Liao, Kuei‐Shu; Li, Chen-Chien; Lu, Chung-Chin; Liao, Yu-Liang; Chen, Li-Ting; Liu, Yanlin; Fu, Chien-Chung; Hsieh, Tsung-Lin

doi:10.1016/j.mee.2015.02.028

Cited by 7 publications

(1 citation statement)

References 17 publications

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“…In fact, alternative dielectric with high-k happens to be one of the most intensively researched topics since last decade in electronics because of its ability to substantially reduce the limitations in scaling. A good number of promising results have been obtained by several research groups dealing with high-k dielectric materials such as hafnium silicate, lanthanum oxide (La 2 O 3 ), titanium dioxide (TiO 2 ), yttrium oxide, aluminium oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ) and zirconium oxide [5][6][7][8][9][10][11]. It has been experimentally found that TiO 2 is ahead in the race for replacement of SiO 2 as the gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

Effect of high‐ k dielectric on the performance of Si, InAs and CNT FET

Mech¹,

Kumar²

2017

Micro & Nano Letters

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The important issue of selection of gate dielectrics to reduce short channel effects (SCEs) is presented along with the study of different channel materials in transistors. A comparative study of performance was carried out of silicon dioxide (SiO 2), aluminium oxide (Al 2 O 3), hafnium oxide (HfO 2), lanthanum oxide (La 2 O 3) and titanium dioxide (TiO 2) as gate dielectrics for Si double gate field-effect transistor (FET), Si gate all around (GAA) nanowire FET (NWFET), indium arsenide GAA NWFET and carbon nanotube (CNT) FETs within nonequilibrium Green's function formalism. Simulated results show that TiO 2 is better gate dielectric as compared with SiO 2 , Al 2 O 3 , HfO 2 and La 2 O 3 , with near ideal subthreshold swing (60 mV/decade), lower I off , improved drain-induced barrier lowering and high transconductance (g m). Also, the gate capacitance (C g), cutoff frequency (f T) and switching time (t) improve with the high-k dielectric materials. Furthermore, the study of different channel material shows that CNT has better SCEs, smaller C g with t ranging from 13.5 to 12.5 fs suitable for digital applications and f T of about 7-9 THz.

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