Radiation effects and reliability characteristics of Ge pMOSFETs

Ruan, Dun-Bao; Chang‐Liao, Kuei‐Shu; Hong, Zi-Qin; Huang, Jiayi; Yi, Shih-Han; Liu, Guanting; Chiu, Po-Chen; Liu, Yanlin

doi:10.1016/j.mee.2019.111034

Cited by 13 publications

(1 citation statement)

References 15 publications

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“…Since we have prepared superior ITO films with optimum mobility, adjustable conductivity, and high infrared transparency, we should also be concerned about the stability to multiple environments to explore the real application of ITO films. With the development of modern medicine and the exploration of outer space, devices such as displays, detectors and TFTs might be used in a high-irradiation environment. Previously, the radiation stability of as-deposition and postannealed ITO films fabricated by magnetron sputtering have been studied, but the samples without annealing showed poor stability, that is a rapid increase in resistivity with a corresponding decrease of transmittance .…”

Section: Resultsmentioning

confidence: 99%

Stable Indium Tin Oxide with High Mobility

Yuan

Liu

et al. 2022

ACS Appl. Mater. Interfaces

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Indium tin oxide (ITO) is widely used in a variety of optoelectronic devices, occupying a huge market share of $1.7 billion. However, traditional preparation methods such as magnetron sputtering limit the further development of ITO in terms of high preparation temperature (>350 °C) and low mobility (∼30 cm 2 V −1 s −1 ). Herein, we develop an adjustable process to obtain high-mobility ITO with both appropriate conductivity and infrared transparency at room temperature by a reactive plasma deposition (RPD) system, which has many significant advantages including low-ion damage, low deposition temperature, large-area deposition, and high throughput. By optimizing the oxygen flow during the RPD process, ITO films with a high mobility of 62.1 cm 2 V −1 s −1 and a high average transparency of 89.7% at 800−2500 nm are achieved. Furthermore, the deposited ITO films present a smooth surface with a small roughness of 0.3 nm. The stability of ITO films to heat, humidity, radiation, and alkali environments is also investigated with carrier mobility average changes of 19.3, 4.4, and 4.7%, showcasing strong environmental adaptability. We believe that stable ITO films with high mobility prepared by a low-damage deposition method will be widely used in full spectral optoelectronic applications, such as tandem solar cells, infrared photodetectors, light-emitting diodes, etc.

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Section: Resultsmentioning

confidence: 99%

Stable Indium Tin Oxide with High Mobility

Yuan

Liu

et al. 2022

ACS Appl. Mater. Interfaces

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Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium

Igumbor

2024

J Comput Electron

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Defect levels induced by defect-complexes in Ge play important roles in device fabrication, characterization, and processing. However, only a few defect levels induced by defect-complexes have been studied, hence limiting the knowledge of how to control the activities of numerous unknown defect-complexes in Ge. In this study, hybrid density functional theory calculations of defect-complexes involving oversize atom (indium) and n-type impurity atoms in Ge were performed. The formation energies, defect-complex stability, and electrical characteristics of induced defect levels in Ge were predicted. Under equilibrium conditions, the formation energy of the defect-complexes was predicted to be within the range of 5.90–11.38 eV. The defect-complexes formed by P and In atoms are the most stable defects with binding energy in the range of 3.31-3.33 eV. Defect levels acting as donors were induced in the band gap of the host Ge. Additionally, while shallow defect levels close to the conduction band were strongly induced by the interactions of Sb, P, and As interstitials with dopant (In), the double donors resulting from the interactions between P, As, N, and the host atoms including In atom are deep, leading to recombination centers. The results of this study could be applicable in device characterization, where the interaction of In atom and n-type impurities in Ge is essential. This report is important as it provides a theoretical understanding of the formation and control of donor-related defect-complexes in Ge.

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Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs

Ruan

Chang‐Liao

et al. 2021

Surface and Coatings Technology

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Radiation effects and reliability characteristics of Ge pMOSFETs

Cited by 13 publications

References 15 publications

Stable Indium Tin Oxide with High Mobility

Stable Indium Tin Oxide with High Mobility

Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium

Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs

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