2016
DOI: 10.1016/j.apsusc.2016.05.015
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Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction

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Cited by 9 publications
(1 citation statement)
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“…The tensive or compressive stresses in thin films depend on many factors, such as deposition technique [11], substrate material [12], substrate temperature during preparation [9], layer material [7], deposition rate [13], work gas pressure [14], etc. Up to now, several methods have been applied to manipulate the mechanical stress of thin films.…”
Section: Introductionmentioning
confidence: 99%
“…The tensive or compressive stresses in thin films depend on many factors, such as deposition technique [11], substrate material [12], substrate temperature during preparation [9], layer material [7], deposition rate [13], work gas pressure [14], etc. Up to now, several methods have been applied to manipulate the mechanical stress of thin films.…”
Section: Introductionmentioning
confidence: 99%