Tunneling conductance of a metal/two-dimensional electron gas with Rashba spin–orbit coupling junction within a lattice model

Jantayod, A.; Pairor, P.

doi:10.1016/j.spmi.2015.10.013

Cited by 5 publications

(4 citation statements)

References 33 publications

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“…Similar behavior of G curve has also been found in previous works of M/FM junction [45,46]. According to the conductance spectrum of the metal/2DEG with a RSOC junction, the Rashba energy can be predicted directly from the characteristic features of the G vs. eV curves [35][36][37]. In this paper, the G dependence on the applied voltage in a FM/FRM junction shows interesting features needed to determine the type of Rashba effects in the FRM, such as RRM, ARM and NRM states.…”

Section: Resultssupporting

confidence: 81%

“…The details for the calculation of the conductance spectra of a junction can be seen in Ref. [37]. An exact solution to them cannot be calculated, and thus the numerical solutions will be presented in the next section.…”

Section: Model and Assumptionsmentioning

confidence: 99%

“…The conductance exhibited a unique behavior in the ARM state when the RSOC and the exchange coupling field are taken into account. The states on the strong spin-orbit interaction are usually influenced by both the intrinsic and extrinsic parameters in the heterostructure and show the important electrical features, such as the current, conductance and the spin polarization [27][28][29][30][31][32][33][34][35][36][37].…”

Section: Introductionmentioning

confidence: 99%

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Unconventional Rashba Spin-Orbit Coupling on the Charge Conductance and Spin Polarization of a Ferromagnetic/Insulator/Ferromagnetic Rashba Metal Junction

Jantayod

2022

Micromachines

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A ferromagnetic/insulator/ferromagnetic Rashba metal junction (FM/I/FRM) with both Rashba spin–orbit coupling (RSOC) and exchange energy splitting was studied theoretically. Two kinds of interactions in FRM generate the three metallic states in a FRM; the Rashba ring metal (RRM) state, the anomalous Rashba metal (ARM) state and the normal Rashba metal (NRM) state. The scattering method and the free-electron model are used to describe the transport properties of particles and to calculate the conductance spectrum and the spin polarization of current in the junction. The conductance spectrum in the applied voltage shows the prominent features at the boundaries not only for the three states of the FRM but also in the ARM state. In addition, the conductance in the RRM and ARM states is strongly influenced by both the thickness and barrier height of the insulator layer. We also found that the spin polarization obtains a high value in the ARM state and is not affected by the qualities of the insulator, unlike the RRM and NRM states. Obtaining high-spin polarization from FRM material can be useful to produce spintronic devices in future devices.

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Section: Resultssupporting

confidence: 81%

Section: Model and Assumptionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Unconventional Rashba Spin-Orbit Coupling on the Charge Conductance and Spin Polarization of a Ferromagnetic/Insulator/Ferromagnetic Rashba Metal Junction

Jantayod

2022

Micromachines

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“…As a result, RSOC affects the charge transport of the 2DEG. Thus, the gate voltage (V g ) dependence (i.e., Fermi level dependence) of the charge conductance of normal metal (NM)/2DEG junctions has been studied [8][9][10][11][12][13][14][15][16] .…”

Section: Introductionmentioning

confidence: 99%

Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

Oshima

Taguchi

Tanaka

2019

Physica E: Low-dimensional Systems and Nanostructures

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We calculate the gate voltage (V g ) dependence of charge conductance in a normal metal (NM)/two dimensional electron gas (2DEG) junction, where Rashba spin-orbit coupling and ferromagnetism exist in the 2DEG. We call this 2DEG as the ferromagnetic Rashba metal (FRM) and the chemical potential of the FRM is controlled by V g . We clarify the physical origin of the unconventional V g dependence of charge conductance in the NM/FRM junction found in our previous work [J. Phys. Soc. Jpn. 87, 034710 (2018)], in which the charge conductance increases with V g , although the number of carries in FRM decreases. We calculate the momentum-resolved charge conductance. It is clarified that the origin of the unconventional V g dependence is due to the non-monotonic change in the size of the inner Fermi surface in FRM as a function of V g .

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Tight binding calculation of tunneling conductance of a metal/ferromagnetic junction

Jantayod

2017

Physica B: Condensed Matter

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Tunneling conductance of a metal/two-dimensional electron gas with Rashba spin–orbit coupling junction within a lattice model

Cited by 5 publications

References 33 publications

Unconventional Rashba Spin-Orbit Coupling on the Charge Conductance and Spin Polarization of a Ferromagnetic/Insulator/Ferromagnetic Rashba Metal Junction

Unconventional Rashba Spin-Orbit Coupling on the Charge Conductance and Spin Polarization of a Ferromagnetic/Insulator/Ferromagnetic Rashba Metal Junction

Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

Tight binding calculation of tunneling conductance of a metal/ferromagnetic junction

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