Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced relativistic mass

Suwanvarangkoon, Assanai; Tang, I‐Ming; Hoonsawat, Rassmidara; Soodchomshom, Bumned

doi:10.1016/j.physe.2011.06.023

Cited by 20 publications

(9 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The graphene was weak spin-coupled, while TI was strong spin-coupled. TI surface also had a special magnetic and superconductivity [ 161 , 162 , 163 , 164 ].…”

Section: Application Of Tismentioning

confidence: 99%

The Property, Preparation and Application of Topological Insulators: A Review

et al. 2017

View full text Add to dashboard Cite

Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2) The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3) Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE). Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET), laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N) are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI.

show abstract

“…The graphene was weak spin-coupled, while TI was strong spin-coupled. TI surface also had a special magnetic and superconductivity [ 161 , 162 , 163 , 164 ].…”

Section: Application Of Tismentioning

confidence: 99%

The Property, Preparation and Application of Topological Insulators: A Review

et al. 2017

View full text Add to dashboard Cite

show abstract

“…As a warm up, let us first consider the case where is no spin-momentum locking, so f (p) = 1 and Eq. (11) gives…”

Section: Tunneling Current In a Parallel Fieldmentioning

confidence: 99%

“…1 Three-dimensional (3D) topological insulators have helically spin-polarized surface states with two-dimensional (2D) Dirac dispersion, which are observed experimentally. 2 TIs not only offer an exciting playground for fundamental physics, but they also have a variety of potential applications ranging from spintronics [3][4][5][6][7][8][9][10][11][12] to quantum computing. 13 However, the experiments show that the Fermi level is often lifted to the conduction band, thus making the topological surface states less relevant for the properties of real materials.…”

Section: Introductionmentioning

confidence: 99%

Spin-polarized tunneling current through a thin film of a topological insulator in a parallel magnetic field

Pershoguba

Yakovenko

2012

Phys. Rev. B

View full text Add to dashboard Cite

We calculate the tunneling conductance between the surface states on the opposite sides of an ultrathin film of a topological insulator in a parallel magnetic field. The parallel magnetic field produces a relative shift of the in-plane momenta of the two surfaces states. An overlap between the shifted Fermi circles and the spinor wave functions results in an unusual dependence of the tunneling conductance on the magnetic field. Because the spin orientation of the electronic surface states in topological insulators is locked to momentum, the spin polarization of the tunneling current can be controlled by the magnetic field.

show abstract

“…Also, in the proximity of a ferromagnet, TI has a mass due to the applied perpendicular magnetic field by ferromagnetic region which is called "induced magnetic gap" [24,25]. Another physical property of TIs refers to the TI-based junctions that tunneling properties have investigated in different forms of junctions, e.g., p wave TI junction by Hong Li et al [26], s and d wave ferromagnet/superconductor junction by Soodchomshom and Suwanvarangkoon et al [27,28], tunneling current in F /I/F junction and f wave superconductor TI junction by Goudarzi et al [29]. One of the considerable properties of TI junctions is related to the dependence of conductance to the direction of magnetization [30].…”

Section: Introductionmentioning

confidence: 99%

Transport and Magnetoresistance in Topological Insulator-Based Ferromagnetic/Insulator/Ferromagnetic Junction in the Presence of External Electric Field

Hoi

Kazzaz

Yarmohammadi

2017

J Supercond Nov Magn

View full text Add to dashboard Cite

Using Landauer-Buttiker formalism, thin barrier approximation, and Klein tunneling theory, the effects of external electric field and induced exchange magnetic gap on the conductance and specifically magnetoresistance (MR) of a topological insulator-based ferromagnet/insulator/ferromagnet (TI-based F /I/F ) junction have investigated. Conductance and MR for parallel (P) and antiparallel (AP) magnetic gap configurations are obtained and discussed. The results of MR reveal a significant negative value for maximum magnetic gap at z = (n + 3/4)π (n = 0, 1...), i.e., in smaller insulator barrier strengths in the presence of an external electric field, while it appears at z = nπ (n = 1, 2...) without electric field in Ref.Linder et al., Phys. Rev. Lett., 104:067001, 2010 (z is the barrier strength). Also, we have found that maximum transmission probability (TP) increases with magnetic gap in the presence of electric field which is one for P case in z = (n + 1/6)π and approaches to one for induced magnetic gap near the Fermi energy for AP case in the absence of electric field and z = (n + 1/2)π . Finally, the conductance and MR oscillate with the magnetic gap and barrier strength.

show abstract

Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced relativistic mass

Cited by 20 publications

References 35 publications

The Property, Preparation and Application of Topological Insulators: A Review

The Property, Preparation and Application of Topological Insulators: A Review

Spin-polarized tunneling current through a thin film of a topological insulator in a parallel magnetic field

Transport and Magnetoresistance in Topological Insulator-Based Ferromagnetic/Insulator/Ferromagnetic Junction in the Presence of External Electric Field

Contact Info

Product

Resources

About