Tunneling in thin MOS structures

Maserjian, J.

doi:10.1116/1.1318719

Cited by 213 publications

(48 citation statements)

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“…An I-V hysteresis loop was found, which is due to the charge accumulation or trapping in the device [100]. At these very low voltages, the current is due to the (inelastic) tunneling into the Si-nc/SiO 2 interface states [102]. The presence of the subbandgap interface states has been reported recently by us [103].…”

Section: Si-nc Based Light Emittersmentioning

confidence: 76%

Silicon Nanocrystals as an Enabling Material for Silicon Photonics

et al. 2009

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| Silicon nanocrystals (Si-nc) is an enabling material for silicon photonics, which is no longer an emerging field of research but an available technology with the first commercial products available on the market. In this paper, properties and applications of Si-nc in silicon photonics are reviewed. After a brief history of silicon photonics, the limitations of silicon as a light emitter are discussed and the strategies to overcome them are briefly treated, with particular attention to the recent achievements. Emphasis is given to the visible optical gain properties of Si-nc and to its sensitization effect on Er ions to achieve infrared light amplification. The state of the art of Si-nc applied in a few photonic components is reviewed and discussed. The possibility to exploit Si-nc for solar cells is also presented. In addition, nonlinear optical effects, which enable fast all-optical switches, are described.

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Section: Si-nc Based Light Emittersmentioning

confidence: 76%

Silicon Nanocrystals as an Enabling Material for Silicon Photonics

et al. 2009

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“…If the oxide thickness is greater than 50 nm, having some trapped charge inside it, it can be governed by PooleFrenkel conduction model. On the other hand, current conduction for the ultrathin oxide layers less than 5 nm, has been termed as direct tunnelling [8]. Figure 3 shows the current-voltage characteristics across MOSiC structure for different gate oxide thicknesses starting from 23.7 nm to 61.4 nm.…”

Section: Resultsmentioning

confidence: 99%

“…The mechanisms for DC conductivity at low and high electric fields in amorphous as well as crystalline materials have been discussed in the literature. Four main mechanisms have been proposed for the observed behaviour: direct tunnelling (DT), Schottky emission (SE), Fowler-Nordheim (FN) tunnelling and Poole-Frenkel (P-F) conduction, depending upon the magnitude of oxide thickness, defect at the interface and polarity of the applied gate voltage [6][7][8]. P-F conduction mechanism is most often observed in amorphous materials, particularly dielectrics, because of the relatively large number of defect centres present in the energy gap.…”

Section: Introductionmentioning

confidence: 99%

Experimental analysis of current conduction through thermally grown SiO2 on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism

2010

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Electrical properties of SiO2 grown on the Si-face of the epitaxial 4H-SiC substrate by wet thermal oxidation technique have been experimentally investigated in metal oxide-silicon carbide (MOSiC) structure with varying oxide thicknesses employing Poole-Frenkel (P-F) conduction mechanism. The quality of SiO2 with increasing thickness in MOSiC structure has been analysed on the basis of variation in multiple oxide traps due to effective P-F conduction range. Validity of Poole-Frenkel conduction is established quantitatively employing electric field and the oxide thickness using forward I-V characteristics across MOSiC structures. From P-F conduction plot (ln(J/E) vs. E 1/2 ), it is revealed that Poole-Frenkel conduction retains its validation after a fixed electric field range. The experimental methodology adopted is useful for the characterization of oxide films grown on 4H-SiC substrate.

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“…The linear portion of this plot for E B between about 2.5 and 4.1 eV is in accord with the Franz twoband model of Refs. [32] and [33], and applies when the conduction band states are free electron-like with predominantly s*-character. The projected values for m eff when E B are attributed to a change in the character of the lowest conduction band states, from s*-extended states in SiO 2 and Si 3 N 4 , to significantly more localized d*-states in the TM and RE dielectrics.…”

Section: Conduction Band Offset Energies and Tunnelingmentioning

confidence: 99%

Spectroscopic studies of metal high‐k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Lucovsky

Hong

Fulton

et al. 2004

Physica Status Solidi (b)

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PACS 78.70.DmThis paper uses X-ray absorption spectroscopy to the study of electronic structure of the transition metal oxides TiO 2 , ZrO 2 and HfO 2 , Zr and Hf silicate alloys, and the complex oxides, GdScO 3 , DyScO 3 and HfTiO 4 . Qualitative and quantitative differences are identified between dipole allowed intra-atomic transitions from core p-states to empty d*-and s*-states, and inter-atomic transitions from transition metal and oxide 1s states to O 2p* that are mixed with transition metal d*-and s*-states for transition metal oxides and silicate alloys. The complex oxide studies have focused on the O K 1 edge spectra. Differences between the spectral peak energies of the lowest d*-features in the respective O K 1 spectra are demonstrated to scale with optical band gap differences for TiO 2 , ZrO 2 and HfO 2 , as well as the complex oxides providing important information relevant to applications of TM oxides as high-k gate dielectrics in advanced Si devices. This is demonstrated through scaling relationships between (i) conduction band offset energies between Si and the respective dielectrics, and the optical band gaps, and (ii) the optical band gaps, the conduction band offset energies, and the electron tunneling masses as functions of the atomic d-state energies of the transition metal atoms.

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Tunneling in thin MOS structures

Cited by 213 publications

References 0 publications

Silicon Nanocrystals as an Enabling Material for Silicon Photonics

Silicon Nanocrystals as an Enabling Material for Silicon Photonics

Experimental analysis of current conduction through thermally grown SiO2 on thick epitaxial 4H-SiC employing Poole-Frenkel mechanism

Spectroscopic studies of metal high‐k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

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