Tunneling recombination in semiconductor structures with nanoscale disorder

Bulyarski, S. V.; Rud, Yu. V.; Vostretsova, L. N.; Kagarmanov, A. S.; Trifonov, O. A.

doi:10.1134/s1063782609040071

Cited by 4 publications

(7 citation statements)

References 4 publications

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“…Such form of the voltage-current characteristic is well described by the formulas for tunnel recombination obtained in works [4,5]. In consistent with the results of these works, at specified voltage the transfer channel, associated with tunnel or hopping transfer from a single localized state, saturates.…”

supporting

confidence: 83%

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High Moisture Sensitivity of the Elements Based on Carbon Nanotubes Array

Bulyarsky¹,

Galperin²,

Ичкитидзе³

et al. 2013

MSA

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The results of the research and development of the moisture-sensitive elements based on the carbon nanotubes (CNT) array are presented. It was shown that CNT arrays that were grown by low-temperature plasma enhanced chemical vapor deposition (PECVD) method on the planar Si structures exhibit extremely high moisture sensitivity. The structure resistance ratio in dry and moisture conditions exceed 400. Such relatively high change in resistances is conditioned by the pattern of change of the charge carrier’s conductivity between certain nanotubes in the bundle when water molecules adsorption occurs.

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supporting

confidence: 83%

“…. In addition the current value is related to the concentration of the localized states (N) by the formula [4,5]:…”

mentioning

confidence: 99%

High Moisture Sensitivity of the Elements Based on Carbon Nanotubes Array

Bulyarsky¹,

Galperin²,

Ичкитидзе³

et al. 2013

MSA

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“…As seen from Fig. 4, the activation energy E a at a forward bias voltage below the forward bias (E g − qU )/2 over the entire range of forward bias voltages is less than 2 V, therefore, tunneling current predominates in this voltage range [19,21]. The activation energy determined from the slope of the curves in Fig.…”

Section: Resultsmentioning

confidence: 86%

“…These defects stimulate tunnel-recombination transfer of charge carriers with the participation of defects in quantum wells [17,18], although analytical characteristics describing these processes are currently lacking. Analytical dependences of the current-voltage characteristics of diodes are essential for a deeper understanding of the processes occurring during the transfer of charge carriers and, in some cases, make it possible to determine the parameters of traps in the space charge region of the device [19][20][21] by using the current-voltage characteristics of the devices for diagnostic purposes. This is facilitated by the models developed [19,20], which allow one to obtain the parameters of defects involved in tunneling-recombination processes using the analysis of current-voltage characteristics,.…”

Section: Introductionmentioning

confidence: 99%

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Tunneling recombination in GaN/InGaN LEDs with a single quantum well

Bulyarsky,

Vostretsova,

Ribenek

2024

Nanosystems: Phys. Chem. Math.

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The paper proposes an analytical model of tunneling-recombination processes with forward and reverse displacements in InGaN/GaN-based structures containing a quantum well, assuming that the processes of generation and recombination are complex, while one of the stages of the transition of the charge carrier to the center is tunneling. Comparing the model with the experiment allowed us to determine the energies of the recombination centers of 0.22 and 0.45 eV. These energies may correspond to centers formed by defect complexes along filamentous dislocations, such as divacansions (V Ga V N ), and a point isolated defect observed in n-type GaN layers grown by various methods, respectively.

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