Tunneling solar cell under concentrated light illumination

Abstract

The behavior of ITO-SiOx-pSi tunneling solar cell (MIS type) under concentrated light illumination is analyzed theoretically. Conversion efficiency as high as 22.7% is predicted at 75×AM1 illumination. At still higher light concentration the efficiency drops mainly owing to the resistance of the SiOx layer. The numberical calculations show the important role of the interface states in the tunneling process, electrical charge storage, and carrier recombination. Large current flowing through the diode can induce significant quasi-Fermi level drop across the insulator layer and electric charge storage in the depletion region. The operation of the diode cannot be explained by the standard MIS theory of low current densities. Therefore a more general treatment is presented here.

Transparent conductor-Si pillars heterojunction photodetector

“…6,17 The SiO x layer between the ITO and the Si effectively hinders the hole-carrier transport from the p-Si to the ITO. 30 However, a reverse bias activates trap-assisted holetunneling in the thin oxide layer. 31 With a high level of holetunneling current, the value of I dark is high and comparable to the light-induced current.…”

Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

“…The values depicted for the work function , electron affinity , ionization energy I P , and band gap E g can be found in the literature for InSe 8,13 and for In 2 O 3 . 3,6,[14][15][16][17] The wide scatter of the In 2 O 3 values shows that more detailed experiments on In 2 O 3 itself are needed. Therefore, as a first step, we have investigated In 2 O 3 films prepared by reactive evaporation as a function of substrate temperature T S and oxygen pressure p ox .…”