Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

Lang, O.; Pettenkofer, C.; Sánchez-Royo, Juan F.; Segura, A.; Klein, Andreas; Jaegermann, Wolfram

doi:10.1063/1.371579

Cited by 95 publications

(53 citation statements)

References 36 publications

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“…The E 2D (L) dependence for p-type InSe is similar to that reported previously for n-type InSe [14,15]. Following annealing, the thickness of the InSe layer is reduced and the air/InSe interface is replaced by In 2 O 3 /InSe, which we model as a half-infinite quantum well using the band alignment between In 2 O 3 and InSe from [39] (dashed line in figure 4(a)). The conduction band (CB) minimum of In 2 O 3 lies above that of InSe by ΔE c = 0.29 eV, whereas the valence band (VB) edge of In 2 O 3 lies below the VB of InSe by ΔE v = 2.05 eV ( figure 4(b)).…”

Section: Quantum Confinement In Inse/in 2 O 3 Heterostructuressupporting

confidence: 75%

Engineering p – n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

et al. 2017

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Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for several applications. Here we report on the chemical reactivity of γ-InSe, a recent addition to the family of 2D vdW crystals. We demonstrate that, unlike other 2D materials, InSe nanolayers can be chemically stable under ambient conditions. However, both thermal-and photo-annealing in air induces the oxidation of the InSe surface, which converts a few surface layers of InSe into In 2 O 3 , thus forming an InSe/In 2 O 3 heterostructure with distinct and interesting electronic properties. The oxidation can be activated in selected areas of the flake by laser writing or prevented by capping the InSe surface with an exfoliated flake of hexagonal boron nitride. We exploit the controlled oxidation of p-InSe to fabricate p-InSe/n-In 2 O 3 junction diodes with room temperature electroluminescence and spectral response from the near-infrared to the visible and near-ultraviolet ranges. These findings reveal the limits and potential of thermal-and photo-oxidation of InSe in future technologies.

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Section: Quantum Confinement In Inse/in 2 O 3 Heterostructuressupporting

confidence: 75%

Engineering p – n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

et al. 2017

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“…Compared with asfabricated devices, S was reduced from 600 mV dec 21 to 160 mV dec 21 , along with improvement in I on /I off ($1 Â 10 6 ), and a shift in V T from 21.16 V to 20.27 V. The improvement in S is due to change in terms of a reduction in the interfacial trap states and in fixed surface charge states 25 . Ozone treatment not only removes defects and contamination from the nanowire surface, but also changes the work function 29,30 . Ozone is also expected to increase the density of oxygen vacancies near the nanowire surface.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

et al. 2007

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“…Because of the high doping level of In 2 O 3, it is feasible that the Fermi level is close to the conduction band edge. 42 The extrapolation of the leading edge of high energy electrons in UPS spectra (Fig. 8) gives the position of the valence band maximum at the oxide surface, E VBM .…”

Section: Structural Chemical and Electronic Properties-mentioning

confidence: 99%

Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties

Muñoz¹,

Heine²,

Lublow³

et al. 2013

ECS J. Solid State Sci. Technol.

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Homoepitaxial p-InP(100) thin films prepared by MOVPE (metallorganic vapor phase epitaxy) were transformed into an InP/oxidephosphate/Rh heterostructure by photoelectrochemical conditioning. Surface sensitive synchrotron radiation photoelectron spectroscopy indicates the formation of a mixed oxide constituted by In(PO 3 ) 3 , InPO 4 and In 2 O 3 as nominal components during photo-electrochemical activation. The operation of these films as hydrogen evolving photocathode proved a light-to-chemical energy conversion efficiency of 14.5%. Surface activation arises from a shift of the semiconductor electron affinity by 0.44 eV by formation of In-Cl interfacial dipoles with a density of about 10 12 cm −2 . Predominant local In 2 O 3 -like structures in the oxide introduce resonance states near the semiconductor conduction band edge imparting electron conductivity to the phosphate matrix. Surface reflectance investigations indicate an enhanced light-coupling in the layered architecture. Solar hydrogen generation from water represents a viable route for establishing a carbon-neutral energy infrastructure based on renewable energy resources.1-4 To achieve this long-term objective, numerous approaches are currently being pursued comprising adapting systems derived from photosynthesis, 5-7 identification of appropriate catalysts, 8 development of transition metal oxide photoelectrodes 9,10,11 as well as devising efficient semiconductor tandem structures.12-14 Because biomimetic systems inspired by natural photosynthesis are characterized by rather low theoretical efficiencies, 6 the use of photoresponsive semiconductor materials for the splitting of water appears currently most promising. It can be shown that dual-bandgap systems reach theoretically efficiencies well above 40% at AM1.5. 15 The development horizon suggests therefore the use of technologically advanced semiconductor materials which would allow comparably fast technical realization. Further, the orthogonalization of charge carrier and photon pathways as well as an increased built-in potential by interfacial doping was recently exploited to achieve efficiencies near 10% using Si as substrate. 16 p-type InP is one of the most efficient photocathode materials for hydrogen evolution available. Heller and Vadimsky 17 have shown three decades ago that hydrogen evolution can occur with an efficiency of 12% if rhodium is deposited as catalytically active and optically transparent thin-film on top of an In 2 O 3 /InP structure. In this work, a new approach based on thin film photoelectrodes is presented. The photocathode is realized by homoepitaxial growth of thin films onto InP wafers which allows the use of liftoff procedures already known for photovoltaic systems. 18,19 The removal of the thin film photocathodes from the growth substrate is thereby possible after fabrication of the devices. This approach reduces production costs, which is a decisive factor for many III-V devices. In this report, we evaluate the applicability of homoepitaxial devices with emphasis in...

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Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

Cited by 95 publications

References 36 publications

Engineering p – n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

Engineering p – n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties

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