Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires

“…[1][2][3][4][5] Properties of electrode/NW contact-interfaces are of particular interest [6][7][8][9][10] due to the potential application of quasi-one-dimensional materials into future nanosensing and nanoelectronic devices. 11 It has been proposed by theory that Fermi level pinning effects, which frequently hinder the performance of planar devices, 12 are expected to be strongly reduced in side contacts to NW channels due to their confined geometry.…”

Fabricating nanowire devices on diverse substrates by simple transfer-printing methods

“…To realize these NWbased applications, great efforts have been devoted to the fabrication of NW devices on flexible/transparent substrates with methods including conventional photo-and electron beam lithography (6)(7)(8)17). Although NW devices have been successfully fabricated on plastics, glass, and 17,18), the choice of device substrates is generally restricted because many useful flexible/transparent substrates, such as polydimethylsiloxane (PDMS) and tapes, suffer from problems such as shrinkage or degradation at the processing temperature, poor adhesion to NWs and metal electrodes, incompatibility with solvents and acids, and being too flexible to be handled for the lithography step.Here we report three simple transfer-printing methods to fabricate NW devices on diverse substrates including PDMS, Petri dishes, Kapton tapes, thermal release tapes, and many types of adhesive tapes. The three transfer-printing methods basically rely on the differences in adhesion to transfer NWs, metal films, and even entire NW devices from weakly adhesive donor substrates to more strongly adhesive receiver substrates when these two substrates are brought into close physical contact.…”

“…14 and 15. In particular, when semiconductor NW devices are fabricated on flexible substrates, they function as versatile building blocks for high performance flexible and/or transparent electronics (16,17) with possible extension to flexible displays, touch screens, flexible solar cells, and conformable sensors (8,16,17). To realize these NWbased applications, great efforts have been devoted to the fabrication of NW devices on flexible/transparent substrates with methods including conventional photo-and electron beam lithography (6)(7)(8)17).…”

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

“…Spectroscopic ellipsometric measurements show effective refractive indices of the nanowire layer-air interface to be between 1.04-1.12 for all samples investigated, directly due to the varied porosity of the nanostructured layers, calculated using the Bruggemann effective medium approximation. This is very advantageous as previous efforts to couple high transmission and low resistivity resorted to ITO/Ag/ITO multilayer sandwiches to combine the improved conductivity of Ag and the high refractive index of the ITO (η = 2.19) to boost transmittance of the metal interlayer [6,22]. The measured absorption edge for the nanostructured ITO films is ~380 nm, a value lower than that for ITO on glass and comparable to ITO/YSZ lattice matched thin films and nanowires [19].…”