Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices
The variation in morphology of zinc oxide when it crystallises is one of the fascinating aspects of this important semiconductor. Alterations in hydrothermal growth conditions can allow the synthesis of a wide range of shapes and structures, including nanowires and layered structures, formed via a secondary growth regime but, to date, little work has investigated the effect changes in growth conditions can have and their influence on the optical properties. Here, systematic changes in growth conditions and reactants were carried out and the results studied using scanning electron microscopy, X-ray diffraction, optical transmission, cathodoluminescence and Raman spectroscopy and atomic force microscopy. We demonstrate that the choice of the reactants can have a significant effect not just on the morphologies of the structure, but on the fundamental properties of the crystalline state such as alterations into the defect states within the system. Furthermore, secondary growth is shown to be dependent on the underlying primary growth morphology, and general reaction conditions for laminar growth are suggested.
Fabrication and intense infrared to blue upconversion emission of proton-implanted Tm3+, Nd3+:Y3Al5O12 (YAG) channel waveguides are reported for the first time to authors’ knowledge. The single or multiple implanted channels are buried by positive induced index change in stacked planar layers grown by liquid-phase epitaxy on pure YAG substrates. The Nd3+ codoping considerably enhances the IR to blue upconversion emission of Tm3+ ions after excitation in resonance with either Nd3+ or Tm3+ absorption transition around 800nm.
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