2000
DOI: 10.1103/physrevb.61.10898
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Tunneling throughX-valley-related impurity states in GaAs/AlAs resonant-tunneling diodes

Abstract: We have investigated resonant tunneling through impurity states with large binding energy of the GaAs/ AlAs double-barrier resonant tunneling heterostructure. These states originate due to the penetration of Si impurity atoms from the heavily doped emitter layer that is adjacent to one of the two AlAs layers. Magnetotunneling transport results demonstrate that resonant peaks and steps arise due to tunneling through the X-valley-related donor states localized in an AlAs layer. The strong asymmetry of the doping… Show more

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Cited by 5 publications
(6 citation statements)
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“…We have measured the splitting of several peaks in I(V ) and find that the different impurity-related peaks give values of g I in the range from 2.1 to 2.22. Our value of the g-factor of the X-related impurity states in AlAs is of a larger absolute value than reported in another tunneling experiment [20], where g=0.34. However, for the experiment described here, the donors are located in a relatively thick, 11.2 nm, AlAs layer, whereas the localized state investigated in Ref.…”
Section: Methodscontrasting
confidence: 75%
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“…We have measured the splitting of several peaks in I(V ) and find that the different impurity-related peaks give values of g I in the range from 2.1 to 2.22. Our value of the g-factor of the X-related impurity states in AlAs is of a larger absolute value than reported in another tunneling experiment [20], where g=0.34. However, for the experiment described here, the donors are located in a relatively thick, 11.2 nm, AlAs layer, whereas the localized state investigated in Ref.…”
Section: Methodscontrasting
confidence: 75%
“…However, for the experiment described here, the donors are located in a relatively thick, 11.2 nm, AlAs layer, whereas the localized state investigated in Ref. [20] was embedded in a narrow 2 nm AlAs barrier. This value of g=0.34 is quite different from that for the X-valley electrons in bulk AlAs.…”
Section: Methodsmentioning
confidence: 92%
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“…1, the bands are aligned in a way that AlAs layer forms a barrier for the electrons in the Γ valley (solid line), and a quantum well (QW) for the X valley electrons (dashed line). There were several analyses of tunneling through X-valley states including first observation of negative differential resistance in such structures [1], considerations on Γ-X transfer mechanisms [2], discussion of momentum conservation [3] as well as through X-minimum-related donor states (including investigations of the splitting of the ground state [4,5], pressure coefficients [6] and binding energies [7] of donors). However, in those experiments macroscopic samples were used where many donors were involved.…”
Section: Introductionmentioning
confidence: 99%
“…The δ-doped structures are usually characterized by a rather high carrier density, which makes them unique among the other two-dimensional (2D) systems. Specific properties of the δ-doped systems make them interesting for both fundamental point of view and application in design and fabrication of electronic devices such as HEMTs [2], δ-FETs [3,4], tunneling diodes [5,6].…”
Section: Introductionmentioning
confidence: 99%