Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; Wiel, Wilfred G. van der; Jong, Machiel Pieter de

doi:10.1038/srep15498

Cited by 15 publications

(9 citation statements)

References 21 publications

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“…However, in the low-bias regime, comparing the conductance at a fixed current density is common practice in the field of spintronics. 34 Equation 4 can be simplified as:…”

Section: Physical Meanings Of Xsp In Ciss Spin-valvesmentioning

confidence: 99%

Spin Polarization in Transport Studies of Chirality-Induced Spin Selectivity

Liu,

Weiss

2023

ACS Nano

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Chirality-induced spin selectivity (CISS) is a recently discovered effect in which structural chirality can result in different conductivities for electrons with opposite spins. In the CISS community, the degree of spin polarization is commonly used to describe the efficiency of the spin filtering/polarizing process, as it represents the fraction of spins aligned along the chiral axis of chiral materials originating from non-spin-polarized currents. However, the methods of defining, calculating, and analyzing spin polarization have been inconsistent across various studies, hindering advances in this field. In this Perspective, we connect the relevant background and the definition of spin polarization, discuss its calculation in different contexts in the CISS, and propose a practical and meaningful figure of merit by quantitative analysis of magnetoresistance in CISS transport studies.

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“…However, in the low-bias regime, comparing the conductance at a fixed current density is common practice in the field of spintronics. 34 Equation 4 can be simplified as:…”

Section: Physical Meanings Of Xsp In Ciss Spin-valvesmentioning

confidence: 99%

Spin Polarization in Transport Studies of Chirality-Induced Spin Selectivity

Liu,

Weiss

2023

ACS Nano

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“…It should also be noted that this calculation overestimates the stray field by a factor Ms/Mr, where Mr is the remanent magnetization of the contact. Similar magnetoresistance switching effect can also arise due to tunneling anisotropic magnetoresistance (TAMR) [27][28][29][30][31][32] . In magnetic tunnel junctions, TAMR signal strongly depend on the orientation of the magnetization with respect to the current direction, crystallographic axes, spin-orbit interaction (SOI) and density of states (DOS) anisotropies in the materials.…”

Section: (C) Gate Dependence Of the Graphene Resistance (Top) And Hal...mentioning

confidence: 99%

1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

et al. 2017

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We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a change in sign of the signal for the electron-and hole-doped regimes, which is in contrast to the expected behavior of the spin signal. Calculations show that the contactinduced fringe fields are typically on the order of hundreds of mT, but can be reduced below 100 mT with careful optimization of the contact geometry. There may be additional contribution from magnetoresistance effects due to tunneling anisotropy in the contacts, which need to be further investigated. These studies are useful for optimization of spin injection and detection in 2D material heterostructures through 1D edge contacts.Phys. Rev. Lett. 100 87204.

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“…Yet, a variety of interesting and unexpected phenomena have been found to originate from the peculiar heterointerfaces in many systems. [41][42][43][44][45] The peculiar heterointerfaces might come from the interesting combination of two different materials, or from a heterointerfacial structure/ property different from that of their bulk phases. In the case of an epitaxial interface, the structures/properties are more complex because various effects come from lattice mismatch (strain) between the adjacent materials.…”

Section: Structures Of Co Layersmentioning

confidence: 99%

“…These thickness-dependent structures of Co layers are expected to result in different interfacial properties and different photocatalytic behaviors in the Co(x)/CoO(111) structures, as observed in the examination of other properties. 41,48,49,52,[56][57][58][59][60][61][62][63][64][65][66]…”

Section: Structures Of Co Layersmentioning

confidence: 99%