1981
DOI: 10.1002/pssa.2210640102
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Twenty five years of semiconductor-grade silicon

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1981
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Cited by 21 publications
(6 citation statements)
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“…[73,76,[82][83][84][85] Therefore, the reaction for production of Si from SiHCl 3 is not expressed as H 2 reduction or thermal decomposition but as chemical vapor deposition (CVD), as it is a solid-gas reaction. [10] The deposition rate of Si in the Siemens process is approximately 1 mm h À1 , which is more than three times larger than in the case of H 2 reduction of SiCl 4 . The diameters of the Si seed rods grow from 10 mm to 200-250 mm in one week for this reaction.…”
Section: H 2 Reduction And/or Thermal Decomposition Of Sihcl 3 (Siemementioning
confidence: 91%
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“…[73,76,[82][83][84][85] Therefore, the reaction for production of Si from SiHCl 3 is not expressed as H 2 reduction or thermal decomposition but as chemical vapor deposition (CVD), as it is a solid-gas reaction. [10] The deposition rate of Si in the Siemens process is approximately 1 mm h À1 , which is more than three times larger than in the case of H 2 reduction of SiCl 4 . The diameters of the Si seed rods grow from 10 mm to 200-250 mm in one week for this reaction.…”
Section: H 2 Reduction And/or Thermal Decomposition Of Sihcl 3 (Siemementioning
confidence: 91%
“…In the temperature range of the Siemens process, H 2 reduction and thermal decomposition proceed simultaneously. [10,15] In this system, higher temperatures are thermodynamically favorable for thermal decomposition. The contributions of H 2 reduction and thermal decomposition to Si production have been qualitatively investigated by Sugiura and Fuwa for temperatures of 1023-1323 K. [81] Although the reactions are representatively expressed as Equations (6) and (7), the mechanism of Si deposition is complicated and includes a route via the chemical adsorption of SiCl 2 on the surface of the substrate.…”
Section: H 2 Reduction And/or Thermal Decomposition Of Sihcl 3 (Siemementioning
confidence: 99%
“…The details of each production process are examined based on original literature and published review articles. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Most methods used for producing high-purity silicon utilize silicon compounds as intermediate feed materials that can be purifi ed to a high degree by conventional technologies. First the low-purity MG-Si is converted into silicon compounds.…”
Section: Kouji Yasuda and Toru H Okabementioning
confidence: 99%
“…Czochralski (CZ) silicon with the concentration of interstitial oxygen atoms (O i ) up to about 10 18 / cm 3 is the most important semiconductor material [1]. Oxygen is the most abundant impurity unintentionally incorporated from the melt in fused silica crucibles during growth.…”
Section: Introductionmentioning
confidence: 99%