2010
DOI: 10.1016/j.jcrysgro.2009.12.005
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Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

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Cited by 22 publications
(15 citation statements)
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“…[7][8][9][10] Heteroepitaxy remains one of the potentially feasible approaches for integration of III-Vs with Si, in which important progress has been made recently. 11 Nevertheless, many important aspects of the formation of extended defects remain to be understood; the formation of stacking faults for example has been attributed both to a formation of faults on {111} facets during early stages of island growth, 3 12 as well as by dissociation of perfect dislocations into partial dislocations.…”
Section: Materials Expressmentioning
confidence: 99%
“…[7][8][9][10] Heteroepitaxy remains one of the potentially feasible approaches for integration of III-Vs with Si, in which important progress has been made recently. 11 Nevertheless, many important aspects of the formation of extended defects remain to be understood; the formation of stacking faults for example has been attributed both to a formation of faults on {111} facets during early stages of island growth, 3 12 as well as by dissociation of perfect dislocations into partial dislocations.…”
Section: Materials Expressmentioning
confidence: 99%
“…We have previously employed time-modulation of P TMGa for obtaining better lateral growth [16], but it has been proven that no modulation of P TMGa is necessary if we employ the 1 mm windows and regular hexagonal prism of InAs as a basis of InGaAs growth. Most of the InGaAs islands had a slightly concave surface probably due to strain coming from in-plane modulation of Ga content, which will be improved by an appropriate modulation of P TMGa during the growth of InGaAs.…”
Section: Uniform Ingaas Micro-disksmentioning
confidence: 99%
“…We have already been successful in growing 200 nm-thick and 6 mm-wide InGaAs micro-disks on a Si(111) substrate, which is covered by SiO 2 mask with circular Si open areas (2 mm in diameter) for selective InGaAs growth [16]. The micro-disks are free from threading dislocations stemming from the latticemismatched interface [17].…”
Section: Introductionmentioning
confidence: 99%
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