Twin mode NV logic gates for high speed computing system on 16nm FINFET CMOS logic process

Chien, Wei-Yu; Wang, Tai-Min; Chih, Yu-Der; Chang, Jonathan; Lin, Chrong Jung; King, Ya‐Chin

doi:10.1109/iedm.2017.8268375

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Publication Types

Select...

Other1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among those emerging memories, Resistive Random Access Memory (RRAM) [1][2][3][4][5][6][7][8][9][10][11][12][13] is one of the most promising candidates due to its low write voltage, fast writing speed, and smaller area. The most common structure of RRAM device is one transistor and one RRAM device (1T1R) cell, which is suitable for high speed and low supply voltage embedded applications due to its simple structure and small cell area.…”

Section: Introductionmentioning

confidence: 99%

An embedded ReRAM using a small-offset sense amplifier for low-voltage operations

Lee

Lin

Yang

et al. 2015

VLSI Design, Automation and Test(VLSI-Dat)

View full text Add to dashboard Cite

This paper presents a Contact Resistive Random Access Memory (CRRAM) macro with an offset-compensated Sense amplifier for low-voltage operation. The proposed circuit aims to solve the variation and speed issues during low-voltage operations. A 256Kb test-chip was fabricated in TSMC 65nm technology. An improvement of 1.78x in read speed and 85.7% in offset was measured compared to conventional sensing methods, and the minimum operating voltage was as low as 0.3V.

show abstract

Section: Introductionmentioning

confidence: 99%