Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K

Krishna, S.; Raghavan, S.; Winckel, G. von; Rotella, P.; Stintz, A.; Morath, Christian P.; Le, Dang Thi Thanh; Kennerly, Stephen W.

doi:10.1063/1.1567806

Cited by 80 publications

(45 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the operating wavelength of quantum dot infrared photodetectors ͑QDIPs͒ is difficult to predict and control accurately due to the extremely sensitive selforganized process of the dot formation. Structure designs such as dots in a well 15 have been proposed and demonstrated with flexibilities in altering the operating wavelength of QDIPs by varying the thickness of the quantum well surrounding the QDs. However, it still requires highly accurate and reproducible growth conditions.…”

Section: Introductionmentioning

confidence: 99%

“…Although interdiffusion studies have been carried out on various QD structures using the methods of rapid thermal annealing ͑RTA͒, 9,10 ion implantation, 11,12 and dielectric capping, 12,13 few device results have emerged. Midinfrared ͑3-5 m͒ and far-infrared ͑8-14 m͒ photodetectors 3,14,15 based on QDs have been predicted to have the advantages of normal incidence and high temperature operation, larger responsivity, and detectivity, in comparison to their QW counterpart. However, the operating wavelength of quantum dot infrared photodetectors ͑QDIPs͒ is difficult to predict and control accurately due to the extremely sensitive selforganized process of the dot formation.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Tan

McKerracher

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

In this work, rapid thermal annealing was performed on InGaAs∕GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700°C, as a result of thermal interdiffusion of the quantum dots (QDs). Correspondingly, the spectral response from the annealed QDIP exhibited a redshift. At the higher annealing temperature of 800°C, in addition to the largely redshifted photoresponse peak of 7.4μm (compared with the 6.1μm of the as-grown QDIP), a high energy peak at 5.6μm (220meV) was also observed, leading to a broad spectrum linewidth of 40%. This is due to the large interdiffusion effect which could greatly vary the composition of the QDs and thus increase the relative optical absorption intensity at higher energy. The other important detector characteristics such as dark current, peak responsivity, and detectivity were also measured. It was found that the overall device performance was not affected by low annealing temperature, however, for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Tan

McKerracher

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…QDs have been incorporated into inorganic polymer detectors with reasonable success in order to manipulate the detector spectral response. Inorganic QD infrared photodetectors (QDIPs) operating well into the mid infrared have attracted much attention due to the ability of varying the quantum well structure and dot size in order to change the photoluminescence spectra [16]. Enhanced radiation resistance in QD-doped InAs/GaAs lasers irradiated by various high energy ions have been reported showing that interaction of charge carriers with non-radiative defect centers are reduced due to efficient exciton localization by QDs [17][18][19][20][21].…”

Section: Tuning the Optical Absorption Of Inp Qds To The Near-irmentioning

confidence: 99%

Advancement of Polymer Detectors for Space Applications

Taylor¹,

Zeng²,

Claus³

2004

View full text Add to dashboard Cite

Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY) 16-03-2004 REPORT TYPE Final Report DATES COVERED (From -To SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)Air Force Research Laboratory Space Vehicles Directorate 3550 Aberdeen Ave., SE SPONSOR/MONITOR'S REPORTKirtland AFB, NM 87117-5776 NUMBER(S) AFRL-VS-PS-TR-2004-1049 DISTRIBUTION / AVAILABILITY STATEMENTAPPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. SUPPLEMENTARY NOTES ABSTRACTPhotovoltaic polymer detectors incorporating Indium Phosphide (InP) and Cadmiume Selenide (CdSe) quantum dots (QDs) were fabricated, characterized for their open circuit voltage and short circuit currents and studied for radiation resistance. InP QD detectors exhibited higher photovoltages and responded further into the near-IR compared to CdSe QD detectors, however, the CdSe QD detectors exhibited higher external quantum efficiencies than InP QD detectors.InP QD detectors showed excellent resistance to gamma-ray and 25.6 MeV protons at a total dose of ~ 150 krad(si), while CdSe QD PPDs irradiated by gamma-rays to 152 krad (Si) damaged more from environmentally-induced aging effects than by ionization-induced processes.The data suggest that both InP and CdSe QD polymer detectors have excellent resistance to irradiation since strong carrier confinement and lifetimes inherent in QDs reduce the interaction with native defect and nuclear caused dislocations compared to conventional quantum well detectors where carriers have greater mobility and can interact freely with recombination centers. Conclusive data demonstrating emerging polymeric materials' resistance to ionizing radiation is critical for eventually applying the technology to space systems. The current lack of a radiation effects data base and absence of rigorous and predictive models for assisting hardened polymer photonics device system designs, best describes the current state-of-the-art. This investigative approach and data resulting from this Phase II effort addresses and responds to these critical issues. SUBJECT TERMSEarly and parallel investigations of the interaction of ionizing radiation with polymer...

show abstract

“…Low dark current [11,18,19], multi-spectral response [16,20,21], highdetectivity [22], high-temperature photodetection [23,24], and IR imaging [25][26][27][28] have been demonstrated in QDIPs.…”

mentioning

confidence: 99%

Quantum-dot infrared photodetectors: a review

Stiff‐Roberts

2009

J. Nanophoton

101

View full text Add to dashboard Cite

Abstract. Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (≥150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot nonuniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.Keywords: InAs/GaAs quantum dots, colloidal quantum dots, quantum-dot infrared photodetectors, QDIP focal plane arrays.

show abstract

Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K

Cited by 80 publications

References 19 publications

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Advancement of Polymer Detectors for Space Applications

Quantum-dot infrared photodetectors: a review

Contact Info

Product

Resources

About