Two critical thicknesses in the preferred orientation of TiN thin film

Oh, U; Je, Jung Ho; Lee, Jeong Y.

doi:10.1557/jmr.1998.0174

Cited by 24 publications

(8 citation statements)

References 10 publications

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“…Several authors [28][29][30][31][32] proposed that the change in texture is the result of minimizing the overall free energy of the film including surface and strain energy contributions, which both exhibit anisotropic directional properties. 2 and 4, there is a strong correlation between the preferred orientation and the intrinsic stress for ␤-WC films with C N ഛ 1.4 at.…”

Section: Preferred Orientation In ␤-Wcmentioning

confidence: 99%

Relatively low temperature synthesis of hexagonal tungsten carbide films by N doping and its effect on the preferred orientation, phase transition, and mechanical properties

Wang

et al. 2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEffect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films Effects of substrate bias on the preferred orientation, phase transition and mechanical properties for NbN films grown by direct current reactive magnetron sputtering J. Appl. Phys. Structural and chemical phase transitions in tungsten carbide films evidenced by the analysis of their stiffness tensorsThe authors deposited N-doped tungsten carbide thin films on Si͑100͒ substrates at 500°C using direct-current reactive magnetron sputtering in a mixture of CH 4 / N 2 / Ar discharge and explored the effects of N doping on the preferred orientation, phase transition, and mechanical properties of the films by using x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation measurements. They found that N doping significantly influenced the compressive stress, which led to a pronounced change in the preferred orientation, phase structure, and hardness for the tungsten carbide film. A phase transition from ␤-WC to ␣-WC occurred when N doping was in the range of 2.9 and 4.7 at. %, meaning that ␣-WC can be obtained at relatively low temperature ͑500°C͒. To reveal the relationship between the stress and phase transition, as well as preferred orientation, the density-functional theory based on first principles was used to calculate the elastic constants and shear modulus for tungsten carbide with a structure of ␤-WC or ␣-WC. The calculated results showed that the preferred orientation depended on the competition between strain energy and surface energy, as well as the grains competitive growth, and the phase transition can be attributed to a decrease in the strain energy. The hardness of ␣-WC was harder than ␤-WC because the shear modulus for ␣-WC was larger than that of ␤-WC, whereas the bulk modulus for ␣-WC was almost equal to that of ␤-WC.

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Section: Preferred Orientation In ␤-Wcmentioning

confidence: 99%

Relatively low temperature synthesis of hexagonal tungsten carbide films by N doping and its effect on the preferred orientation, phase transition, and mechanical properties

Wang

et al. 2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The material of interest has a B1 rock-salt cubic crystal structure, a class of material for which many researchers have observed similar dependences of texture on growth conditions in the past. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] However, only a few manuscripts are dedicated to a detailed texture characterization and an analysis of the technological factors determining the texture. In this article, we present a characterization of various factors contributing to texture formation in our films, and relate the results to existing models.…”

Section: Introductionmentioning

confidence: 99%

Texture formation in sputter-deposited (Nb0.7,Ti0.3)N thin films

Iosad

Pers

Grachev

et al. 2002

Journal of Applied Physics

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Articles you may be interested inThe influence of the growth rate on the preferred orientation of magnetron-sputtered Ti-Al-N thin films studied by in situ x-ray diffraction J. Appl. Phys. 98, 044901 (2005); 10.1063/1.1999829 Nanostructure formation during deposition of TiN ∕ SiN x nanomultilayer films by reactive dual magnetron sputteringWe studied the properties of (Nb 0.7 ,Ti 0.3 )N films deposited by reactive magnetron sputtering in an atmosphere of argon and nitrogen at ambient substrate temperature, with a particular focus on the technological factors that determine film texture. The texture in the nitrides of transition metals determines many processes, including the wear resistance of tool coatings, diffusion in microelectronic devices, and the rate of chemical etching. Thus, since our goal is to use (Nb 0.7 ,Ti 0.3 )N films in superconducting microelectronic devices, texture control is an essential element of our technology. We find that increasing the total gas pressure, while keeping the film chemical composition constant, results in a decrease in the ratio of the ͓200͔ and ͓111͔ x-ray diffraction ͑XRD͒ line intensities on ⌰-2⌰ Bragg-Brentano scans. Similar changes in XRD patterns are observed as the nitrogen injection increases for a constant sputtering pressure. In addition, XRD examination shows that some samples have in-plane texture developed due to self-shadowing during growth. Transmission electron microscopy reveals that all of the films consist of textured, elongated grains. Analyzing the experimental data, it is concluded that the thermalization of the sputtering yield determines the process of texture formation in the experiment with pressure variation, with an increase in adatom energy resulting in a change in texture from ͓111͔ to ͓100͔. However, adatom energy is not the only determining factor-the nitrogen concentration in the sputtering gas also has a strong impact on the film texture. In particular, despite the fact that an increase in nitrogen injection results in an increase in adatom energy, the film texture is driven toward ͓111͔.

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“…These crystallographic reorientation phenomena have also been seen in other systems such as titanium nitride (TiN) and most recently in La 2 NiO 4 and will be discussed further in a later section . [18][19][20] To confirm the orientation transition, TEM studies were carried out on the 100-nm thick LSNO film. Figure 5 shows the TEM bright field images of the 100 nm thick LSNO film on STO substrate.…”

Section: A Xrd Studiesmentioning

confidence: 99%

Heteroepitaxy and crystallographic orientation transition in La_1.875Sr_0.125NiO₄thin films on single crystal SrTiO₃

2013

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We investigate the orientation transition and strain relaxation in oxygenated epitaxial strontiumdoped lanthanum nickelate, La 1.875 Sr 0.125 NiO 41d (LSNO) thin films grown on single crystal strontium titanate, SrTiO 3 (STO) substrates. Structural evolution has been studied as a function of film thickness by x-ray diffraction, pole figure analysis, and transmission electron microscopy (TEM). The LSNO layer grows epitaxial (OR1) with respect to the STO substrate with an orientation (001) OR1 //(001) STO and ,001. OR1 //,001. STO. This orientation is maintained up to approximately 15 nm as observed from TEM, at which point it undergoes reorientation and lattice mismatch strain relaxation. The growth continues with a new orientation (OR2) as (100) OR2 //(001) OR1 and with ,100. OR2 //,001. OR1 and ,001. OR2 //,001. OR1 with respect to the epitaxial LSNO layer. We consider possible mechanisms in detail leading to these phenomena given that the potassium nickel fluoride (K 2 NiF 4 )-structured lattice is able to accommodate excess oxygen interstitials and corresponding changes in the Ni valence state. By investigating the phase space of deposition parameters, we experimentally identify key factors leading to the reorientation phenomena.

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Two critical thicknesses in the preferred orientation of TiN thin film

Cited by 24 publications

References 10 publications

Relatively low temperature synthesis of hexagonal tungsten carbide films by N doping and its effect on the preferred orientation, phase transition, and mechanical properties

Relatively low temperature synthesis of hexagonal tungsten carbide films by N doping and its effect on the preferred orientation, phase transition, and mechanical properties

Texture formation in sputter-deposited (Nb0.7,Ti0.3)N thin films

Heteroepitaxy and crystallographic orientation transition in La_1.875Sr_0.125NiO₄thin films on single crystal SrTiO₃

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Two critical thicknesses in the preferred orientation of TiN thin film

Cited by 24 publications

References 10 publications

Relatively low temperature synthesis of hexagonal tungsten carbide films by N doping and its effect on the preferred orientation, phase transition, and mechanical properties

Relatively low temperature synthesis of hexagonal tungsten carbide films by N doping and its effect on the preferred orientation, phase transition, and mechanical properties

Texture formation in sputter-deposited (Nb0.7,Ti0.3)N thin films

Heteroepitaxy and crystallographic orientation transition in La1.875Sr0.125NiO4thin films on single crystal SrTiO3

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Heteroepitaxy and crystallographic orientation transition in La_1.875Sr_0.125NiO₄thin films on single crystal SrTiO₃