Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

The high frequency response of near-room temperature long wavelength infrared (LWIR) HgCdTe heterostructure photodiodes is investigated using a Fourier space method. The MOCVD HgCdTe multilayer heterostructures were grown on GaAs substrates. The response time of devices as a function of bias has been measured experimentally by using 10-μm quantum cascade laser and fast oscilloscope with suitable transimpedance amplifier. Results of theoretical predictions are compared with experimental data. It is shown that the response time at weak reverse bias condition is mainly limited by the drift time of carriers moving into π-n+ junction. Using the reverse bias higher than 50 mV, the transit time across the absorber region limits the response time. The response time of small-area devices decreases in the region of week reverse bias achieving value below 1 ns.

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“…(19), for the photodiode biased with two values of reverse voltage of 50 mV and 100 mV. Capacitance decreases with frequency down to zero.…”

Section: Resultsmentioning

confidence: 99%

High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes

Kopytko

Jóźwikowski

Jóźwikowska

et al. 2010

Opto-Electronics Review

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“…In this case, the MCT-metal contact type can be estimated by the metal workfunction. The In workfunction value is 3.97 eV, while the dependence of Hg 1-x Cd x Te electron affinity on the composition x can by described by the following empirical expression [6] ( )…”

Section: Sensitive Structures Based On Hg 1-x CD X Te and Their Electmentioning

confidence: 99%

In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection

Kukhtaruk¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This paper reports on the development and investigations of In-Hg 1-x Cd x Te-In structures with symmetric nonlinear I-V curves that are sensitive to sub-terahertz radiation. It is shown that at low currents photoresponse of the detectors based on these structures is due to the presence of potential barriers at the contacts. The dependences of the photoresponse as the function of the bias current are measured at the radiation frequency ν = 140 GHz in 77-300 K temperature range. The studied structures may be used as the detectors of sub-terahertz radiation at room temperature or under weak cooling. The calculated NEP of investigated In-n-Hg 0.61 Cd 0.39 Te-In detectors was 3.5·10 , if taking into account thermal and shot noise.

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“…The equations describing drift−diffusion (DD) model and parameters used in calculation of recombi− nation rates could be found in monograph by Capper [25]. Physical models used in a simulation of the performance to include frequency time response, TAT and BTB are pre− sented in many papers [26][27][28][29][30][31][32][33][34][35]. Table 1 presents parameters taken in simulation of LWIR HOT testing detector.…”

Section: Numerical Modellingmentioning

confidence: 99%