Two-dimensional analysis of the interface state effect on current gain for a 4H–SiC bipolar junction transistor

张有润,; 张波,; 李肇基,; 邓小川,

doi:10.1088/1674-1056/19/6/067102

Cited by 8 publications

(3 citation statements)

References 22 publications

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“…Because of the high SiC/SiO 2 interface state density, the surface Fermi level has been even pinned and the downward bending of energy band occurs in the surface. Therefore, the injected electrons from the emitter are captured by interface traps in the extrinsic p-base region [20]. However, fortunately, owing to the effective modulate effect of the extending emitter electrode on the extrinsic p-base region's potential, the surface energy band in the extrinsic p-base of EFP-BJT bends upward, leading to an accumulation region of the holes.…”

Section: Resultsmentioning

confidence: 99%

Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability

Zhang

Chen

Luo

et al. 2019

Semicond. Sci. Technol.

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A silicon carbide bipolar junction transistor with novel emitter field plate (EFP-BJT) design is proposed in this paper. The fabricated EFP-BJT features a metal plate of the extending emitter electrode with a 50-nanometer-thick oxide layer overlapped on the extrinsic base surface. The contrast of experimental results show that a 56% increase of maximum current gain is obtained by the EFP-BJT compared with a conventional SiC BJT (C-BJT), with the EFP-BJT's current gain of 43 measured at the collector current density (J C ) of 716 A cm −2 corresponding to a specific on-state resistance (R SP_ON ) of 5.4 mΩ•cm 2 and open-base breakdown voltage (BV CEO ) of 1.5 kV. The novel EFP-BJTs are entirely compatible with the process and design considerations of the conventional ones. The in-depth mechanism comparisons between the proposed EFP-BJT and C-BJT are studied by the simulation tool TCAD Silvaco. The surface recombination effect of EFP-BJT is greatly reduced by the modulation of the emitter field plate. Additionally, due to the surface recombination suppression of the novel structure, EFP-BJTs have effectively enhanced reliability. Compared with C-BJTs, there is no significant degradation of the collector current for the fabricated EFP-BJTs under the forward current stress test.

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Section: Resultsmentioning

confidence: 99%

Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability

Zhang

Chen

Luo

et al. 2019

Semicond. Sci. Technol.

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“…In order to analyze the circuit-level performance of the proposed strained BCPT, a 2-D mixed-mode Atlas simulator [33,34] is used. Here, we realize inverting amplifiers based on the strained BCPT and conventional BCPT, as shown in Fig.…”

Section: Mixed-mode Analysis Of the Proposed Strained Bcpt Devicementioning

confidence: 99%

Impact of strained silicon on the device performance of a bipolar charge plasma transistor

Singh¹

2018

J. Semicond.

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In this manuscript we analyze a unique approach to improve the performance of the bipolar charge plasma transistor (BCPT) by introducing a strained Si/SixGe1−x layer as the active device region. For charge plasma realization different metal work-function electrodes are used to induce n+ and p+ regions on undoped strained silicon-on-insulator (sSOI or SixGe1−x) to realize emitter, base, and collector regions of the BCPT. Here, by using a calibrated 2-D TCAD simulation the impact of a Si mole fraction x (in SixGe1−x) on device performance metrics is investigated. The analysis demonstrates the band gap lowering with decreasing Si content or effective strain on the Si layer, and its subsequent advantages. This work reports a significant improvement in current gain, cutoff frequency, and lower collector breakdown voltage (BVCEO) for the proposed structure over the conventional device. The effect of varying temperature on the strained Si layer and its implications on the device performance is also investigated. The analysis demonstrates a fair device-level understanding and exhibits the immense potential of the SixGe1−x material as the device layer. In addition to this, using extensive 2-D mixed-mode TCAD simulation, a considerable improvement in switching transient times are also observed compared to its conventional counterpart.

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“…As a third-generation semiconductor, silicon carbide (SiC) has significant advantages in materials and devices, with high critical electrical field, high thermal conductivity, and high electron saturation velocity [1][2][3]. SiC based metal-semiconductor field-effect transistors (MESFETs) have become the key components for high-power, high-efficiency and high-frequency microwave applications because of their excellent properties.…”

Section: Introductionmentioning

confidence: 99%

Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

Jia

et al. 2019

Micromachines

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A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE).

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Two-dimensional analysis of the interface state effect on current gain for a 4H–SiC bipolar junction transistor

Cited by 8 publications

References 22 publications

Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability

Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability

Impact of strained silicon on the device performance of a bipolar charge plasma transistor

Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

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