This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor (LDMOS) with selfadaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (E I ) and increase breakdown voltage (BV). The BV and E I of SAC LDMOS increase to 612 V and 600 V/µm from 204 V and 90.7 V/µm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on E I are defined and analysed.

, and Li Zhao-Ji( ) a)

Chaos in complex motor networks induced byNewman Watts small-world connections * Wei Du-Qu( ) a) † , Luo Xiao-Shu( ) a) , and Zhang Bo( ) b)

This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H–SiC bipolar junction transistor (BJT). Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H–SiC BJT performance.