Wang Yuan-Gang( ), Luo Xiao-Rong( ) † , Ge Rui( ), Wu Li-Juan( ), Chen Xi( ), Yao Guo-Liang( ), Lei Tian-Fei( ), Wang Qi( ), Fan Jie( ), and Hu Xia-Rong( )

, and Li Zhao-Ji( ) a)

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor (LDMOS) with selfadaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (E I ) and increase breakdown voltage (BV). The BV and E I of SAC LDMOS increase to 612 V and 600 V/µm from 204 V and 90.7 V/µm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on E I are defined and analysed.