Two-dimensional CdX (X = Se, Te) nanosheets: controlled synthesis and their photoluminescence properties

Haleem, Yasir A.; Di, Qiumei; Bai, Bing; Xu, Meng; Li, Jiajia; Rong, Hongpan; Zhang, Jiatao

doi:10.1039/c9tc04997e

Cited by 4 publications

(6 citation statements)

References 46 publications

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“…The observed broad PL spectrum is a result of the involvement of multiple transitions and the presence of surface trap-states, which cannot be sufficiently resolved at room temperature. [22] PL spectra for thicker samples are shown in Figure S8 (Supporting Information), revealing a PL peak shift and thickness dependent emission profile.…”

Section: Synthesis and Characterization Of 2d Bi 2 Smentioning

confidence: 99%

Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy

Messalea

Zavabeti

Mohiuddin

et al. 2020

Adv Materials Inter

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Abstract2D materials with high in‐plane anisotropy are rapidly emerging as a tantalizing class of nanomaterials with promising applications in nanoelectronics and optoelectronics since they provide an additional degree of freedom that can be exploited in device design. The large‐area synthesis of such materials remains however challenging since the anisotropic crystal structure renders identifying a suitable growth substrate to be difficult, while the nanosheets are usually too fragile for the exfoliation and transfer of macroscopic sheets. This work reports the scalable synthesis of highly crystalline, large‐area 2D Bi2S3 nanosheets using a novel liquid‐metal‐based synthesis approach. Ultrathin bismuth oxide sheets are exfoliated from molten bismuth followed by tube furnace sulfurization. The strategy effectively separates the formation of layered structures from the process of anisotropic crystallization, overcoming the shortcomings of established techniques. The synthesized nanosheets feature a highly anisotropic orthorhombic crystal structure with intraplane van der Waals gaps and a direct bandgap of ≈2.3 eV. The nanosheets are found to be highly photoconductive with a photoresponsivity of 8 A W−1. Bi2S3 channel‐based field effect transistors feature a maximum hole mobility of 28 cm2 V−1 s−1, highlighting the excellent electronic properties of the isolated nanosheets.

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Section: Synthesis and Characterization Of 2d Bi 2 Smentioning

confidence: 99%

Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy

Messalea

Zavabeti

Mohiuddin

et al. 2020

Adv Materials Inter

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“…𝜏 2 for an average decay life time, [19,20] where I(t) represents the emission intensity at a specific time t and encompasses PL due to the decay from the band-edge and trap-state, A and 𝜏 correspond to the magnitude and decay time of the PL lifetimes, respectively. The band-edge PL decay comprises a rapid component (𝜏 1 ) lasting 0.43 ns with an amplitude (A 1 ) of 96.6% and the trap-state PL decay features a slower component (𝜏 2 ) lasting 2.49 ns with an amplitude (A 2 ) of 3.4%.…”

Section: Resultsmentioning

confidence: 99%

“…The band-edge PL decay comprises a rapid component (𝜏 1 ) lasting 0.43 ns with an amplitude (A 1 ) of 96.6% and the trap-state PL decay features a slower component (𝜏 2 ) lasting 2.49 ns with an amplitude (A 2 ) of 3.4%. The average lifetime (𝜏 avg ) is measured 0.77 ns using the relation; [20] 𝜏 avg = (…”

Section: Resultsmentioning

confidence: 99%

“…Figure 1f illustrates the TRPL spectrum of Bi 2 S 3 , where an exponential decay was observed and analyzed using the biexponential equation;

I\ ( t ) = {{A}_1}\ {{e}^{ - \frac{t}{{{{\tau }_1}}}}} + {{A}_2}{{e}^{ - \frac{t}{{{{\tau }_2}}}}}

for an average decay life time, [ 19,20 ] where I(t) represents the emission intensity at a specific time t and encompasses PL due to the decay from the band‐edge and trap‐state, A and τ correspond to the magnitude and decay time of the PL lifetimes, respectively. The band‐edge PL decay comprises a rapid component (τ 1 ) lasting 0.43 ns with an amplitude ( A 1 ) of 96.6% and the trap‐state PL decay features a slower component ( τ 2 ) lasting 2.49 ns with an amplitude ( A 2 ) of 3.4%.…”

Section: Resultsmentioning

confidence: 99%

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Ultrahigh Photo‐Responsivity and Detectivity in 2D Bismuth Sulfide Photodetector for Vis–NIR Radiation

Panwar,

Dey,

Sharma

et al. 2024

Small

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Bismuth sulfide (Bi2S3) exhibits a direct energy bandgap and an exceptional optical absorption capability over a broadband radiation, thus presents a novel class of 2D photodetector material. The field effect transistor (FET) photodetector device is fabricated from 2D Bi2S3. An anomalous variation in the transport characteristics of 2D Bi2S3 is observed with the variation in temperature. The electrical resistance reduces by 99.26% at 10 K compared to the response at 300 K. Defects due to the bismuth and sulfur vacancies play a critical role in the dramatic behavior, which is confirmed using photoluminescence, time‐resolved photoluminescence, Hall measurements, and energy dispersive X‐ray spectroscopy. The density functional theory calculations provide a significant insight into the thermodynamic properties of intrinsic defects in Bi2S3. Moreover, the effect of gate bias on responsivity additionally confirms its invariance at low temperature. The Bi2S3 based FET photodetector achieves ultrahigh responsivity in the order of ≈106 A W−1 and detectivity of ≈1014 Jones. Moreover, the external quantum efficiency of ≈107% is measured in a wide spectrum of optical illumination (532 to 1064 nm) with a noise‐equivalent power of 3.5 × 10−18 W/√Hz at a bias of 0.2 V. The extraordinary performance of Bi2S3 photodetector outstands 2D photodetectors.

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“…Furthermore, QDs can be further enhanced in terms of stability and biocompatibility through surface ligand modification , and can be loaded with specific targeting motifs and therapeutic agents, providing more possibilities for their applications in medical imaging and therapy. − So far, the commonly used luminescent QDs are mostly II–VI semiconducting nanomaterials, such as Cd(S, Se, and Te) QDs, − types of which have been the subject of significant controversy in biological applications due to their heavy metal content. Thus, some biocompatibility and nontoxicity QDs have been increasingly applied in diagnosis and treatment in recent years, such as Zn(S, Se, Te) semiconductor QDs. − Therefore, developing a new type of quantum dot nanomaterials with low toxicity and utilizing precise fluorescence-guided imaging would be highly beneficial.…”

Section: Introductionmentioning

confidence: 99%

Peptide-Functionalized ZnSe:Mn Quantum Dots as Fluorescent Probes for Accurate Localization of Hidden Dental Lesion Sites

Xue

Dong

et al. 2023

ACS Appl. Nano Mater.

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Streptococcus mutans (S. mutans) is considered the primary bacteria responsible for dental caries, and specific recognition and fluorescence labeling can achieve accurate detection and early diagnosis of oral diseases such as dental caries. However, due to the weak stability of traditional imaging probes in solution and a lack of specific recognition functions, there are still significant challenges in fluorescent imaging detection of dental caries lesions. Herein, we report a peptide-QDs composite fluorescent probe that can achieve highperformance imaging of S. mutans and enable early diagnosis of the susceptible sites and hidden early carious lesions of dental caries. This fluorescent probe has high fluorescence stability, good biocompatibility, and low biotoxicity in physiological environments. It can specifically recognize and fluorescently label S. mutans, responsible for early dental caries, accurately locating dental lesion sites. Combined with visible fluorescence analysis, it is more convenient to screen for hidden dental lesions that might otherwise be ignored. Due to its low synthesis cost, stable storage, and simple imaging method, the peptide-QDs composite fluorescent probe can be widely used in routine dental examinations for accurate screening of dental diseases.

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Two-dimensional CdX (X = Se, Te) nanosheets: controlled synthesis and their photoluminescence properties

Abstract: Two-dimensional (2D) CdX (X = Se, Te) nanosheets are potential candidates for novel optoelectronic applications.

Cited by 4 publications

References 46 publications

Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy

Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy

Ultrahigh Photo‐Responsivity and Detectivity in 2D Bismuth Sulfide Photodetector for Vis–NIR Radiation

Peptide-Functionalized ZnSe:Mn Quantum Dots as Fluorescent Probes for Accurate Localization of Hidden Dental Lesion Sites

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Two-dimensional CdX (X = Se, Te) nanosheets: controlled synthesis and their photoluminescence properties

Abstract: Two-dimensional (2D) CdX (X = Se, Te) nanosheets are potential candidates for novel optoelectronic applications.

Cited by 4 publications

References 46 publications

Two‐Step Synthesis of Large‐Area 2D Bi2S3 Nanosheets Featuring High In‐Plane Anisotropy

Two‐Step Synthesis of Large‐Area 2D Bi2S3 Nanosheets Featuring High In‐Plane Anisotropy

Ultrahigh Photo‐Responsivity and Detectivity in 2D Bismuth Sulfide Photodetector for Vis–NIR Radiation

Peptide-Functionalized ZnSe:Mn Quantum Dots as Fluorescent Probes for Accurate Localization of Hidden Dental Lesion Sites

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Product

Resources

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Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy

Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy