Two-dimensional coherent VCSEL arrays with configurable beam emissions

Pan, Guanzhong; Xun, Meng; Sun, Yun; Zhao, Zijian; Xu, Chen; Xie, Yiyang; Wu, Dexin; Zhou, Ji‐Xun

doi:10.1016/j.optlastec.2021.107809

Cited by 4 publications

(2 citation statements)

References 20 publications

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“…Vertical cavity surface emitting laser (VCSEL) is a widely used semiconductor laser due to their significant advantages, such as single longitudinal mode output, low threshold current, small device structure, easy to two-dimensional integration [1][2][3][4]. With the development of long-distance communication and laser phased array radar in recent years, higher requirements are putting forward for the optical output power of laser and the parallel output of beam array [5][6]. However, as the increasing number of cells in VCSEL arrays to reach higher optical output power, the electro-opto-thermal characteristic is more intricate.…”

Section: Introductionmentioning

confidence: 99%

Improvement of thermally induced current bifurcation in VCSEL arrays with non-uniform series resistance design

Zhou,

Jin,

Lei

et al. 2024

MATEC Web Conf.

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Non-uniform series resistance design of VCSEL arrays is studied to improve thermally induced current bifurcation based on an electro-opto-thermal model of VCSEL arrays. Taking an 850nm VCSEL array with 4×4 cells for example, the impact of series resistance on current bifurcation is investigated. Increasmg series resistance is helpful to enhance the critical current values of current bifurcation point (Irc) and hence delay the current bifurcation phenomenon. For VCSEL array with non-uniform series resistance, Irc is increased by 28.6% and the total output optical power is enhanced by 14.3% when compared with that of VCSEL array with uniform series resistance. Therefore, non-uniform series resistance design is a better method for delaying the current bifurcation phenomenon and enhancuig the output optical power of VCSEL arrays.

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Section: Introductionmentioning

confidence: 99%

Improvement of thermally induced current bifurcation in VCSEL arrays with non-uniform series resistance design

Zhou,

Jin,

Lei

et al. 2024

MATEC Web Conf.

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show abstract

“…III-V semiconductor alloy materials have been intensively investigated in the field of optoelectronics and microelectronics because of their direct band gap and high electron drift rate compared to Si material [1][2][3][4]. InGaP/GaAs heterojunctions have the following advantages over AlGaAs/GaAs heterojunctions: a greater valence band offset and smaller conduction band offset, allowing for high current gain; no Al, lower In activity, and the absence of DX centers, which can effectively improve device gain and noise characteristics, as well as high device reliability; and a high selective corrosion ratio, large process tolerance, high yield, and relatively mature process.…”

Section: Introductionmentioning

confidence: 99%

High Uniformity 6-Inch InGaP Epitaxial Growth

et al. 2023

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The growth of 6-inch In0.485Ga0.515P has been examined in this study. The effects of growth temperature, the V/III ratio, and the H2 total flow on solid composition, growth rate, and crystal quality have been systematically investigated and discussed. Additionally, the effect of growth conditions on doping efficiency has been investigated. Finally, the relationship between electrical uniformity, optical uniformity, and the growth conditions of the 6-in epitaxial layer is discussed. At a growth temperature of 600 °C and a V/III of 250, a high uniformity 6-in InGaP epitaxial layer with an electrical uniformity of 0.33% and optical uniformity of 0.03% was produced. InGaP was grown by the metal-organic chemical vapor deposition method in an Aixtron 2800G4 reactor. High resolution X-ray diffraction (HRXRD), photoluminescence (PL), sheet resistance, electrochemical capacitance-voltage (ECV), and the Hall effect were used to characterize the characteristics of InGaP epitaxial layers.

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Controlled in-phase coherent coupling of laser array with monolithically-integrated arrayed Fourier filter

Qi,

Lan,

et al. 2024

Optics & Laser Technology

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Two-dimensional coherent VCSEL arrays with configurable beam emissions

Cited by 4 publications

References 20 publications

Improvement of thermally induced current bifurcation in VCSEL arrays with non-uniform series resistance design

Improvement of thermally induced current bifurcation in VCSEL arrays with non-uniform series resistance design

High Uniformity 6-Inch InGaP Epitaxial Growth

Controlled in-phase coherent coupling of laser array with monolithically-integrated arrayed Fourier filter

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