Two-Dimensional Electron Transport and Scattering in Bi(111) Surface States

Jnawali, Giriraj; Wagner, Thorsten; Hattab, H.; Möller, R.; Lorke, Axel; Hoegen, M. Horn‐von

doi:10.1380/ejssnt.2010.27

Cited by 12 publications

(11 citation statements)

References 27 publications

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“…The film quality was verified in-situ by low-energy electron diffraction (LEED) and STM. The low-temperature electron transport in such Bi films is dominated by a high density of surface-state electrons of about 10 13 /cm 2 and a negligible carrier concentration in the film bulk [28,29]. Submonolayer (ML) amounts of single-atom metal impurities were deposited onto the bare Bi films at 5 K into the STM without detaching the sample.…”

Section: Methodsmentioning

confidence: 99%

Barrier-free subsurface incorporation of3dmetal atoms into Bi(111) films

et al. 2015

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By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. It allows a tuning of the electronic properties not only for the pure Bi (111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.

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Section: Methodsmentioning

confidence: 99%

Barrier-free subsurface incorporation of3dmetal atoms into Bi(111) films

et al. 2015

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“…25,26 For the homoepitaxial Bi(111) system, it has been shown that the change of conductance upon adsorption can be indeed be accurately modeled. 9,27 Here, we will extend this model including charge transfer (CT) and atomic steps of the Bi(111) films, which serve as perfect sinks for the diffusing monomers. The set of rate equations that reveal the main features of the G/G 0 curve (shown in Fig.…”

Section: E Nucleation Of Tb Atoms: Simulationmentioning

confidence: 99%

Diffusing magnetic Tb impurities and magnetotransport in strongly spin-polarized Bi films

et al. 2013

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As a contribution to electronic transport within strongly spin-polarized surface states and its modification by adsorption of magnetic impurities we studied the adsorption of Tb (atomic magnetic moment 10 μ B ) on epitaxial Bi(111) films by means of surface sensitive (magneto)conductance and low-energy electron diffraction. Surface diffusion turned out to be non-negligible even at substrate temperatures of 10 K. The Tb adatoms finally nucleate at intrinsic defects of the Bi (111) surface, where the Tb impurities act as dopants but not as scatterers. Nevertheless, time-dependent measurements allowed to determine also single-particle Tb scattering properties, as also supported by simulations of adsorption kinetics and time-dependent conductance. The magnetoconductance properties are characterized by small charge transfer (0.05 e/atom) and strong spin-orbit scattering, which in this case results only in strong reduction of the weak antilocalization effect but not a reversal to weak localization as for Fe and Co [see Lükermann, Sologub, Pfnür, Klein, Horn-von Hoegen, and Tegenkamp, Phys. Rev. B 86, 195432 (2012)]. Although Tb has a magnetic moment, which is by far higher than for adsorbed Fe and Co, it turns out that the f electrons of Tb play essentially no role in scattering of the conduction electrons, yielding an even smaller scattering cross section than that for Fe and Co. The adatom coordination (interstitial or on the surface) may also play an important role.

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“…The sheet carrier density in this surface state, as deduced from the Fermi surface map or Hall measurements, is of the order of n ss ∼ 0.5 − 1.5×10 13 cm −2 , which for film thicknesses below 10 nm is almost two orders of magnitude higher than the projected carrier density in the bulk (∼ 10 11 cm −2 ) [4,8,9]. In recent works it has been confirmed that bulk conduction is negligible in ultrathin Bi films at low temperatures [9,10].…”

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confidence: 92%

Manipulation of Electronic Transport in the Bi(111) Surface State

et al. 2012

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We demonstrate the controlled manipulation of the 2D-electronic transport in the surface state of Bi(111) through the deposition of small amounts of Bi to generate adatoms and 2D islands as additional scatterers. The corresponding increase in resistance is recorded in situ and in real time. Model calculations based on mean-field nucleation theory reveal a constant scattering efficiency of adatoms and of small 2D Bi islands, independent of their size. This finding is supported by a detailed scanning tunneling microscopy and spectroscopy study at 5 K which shows a highly anisotropic scattering pattern surrounding each surface protrusion.

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Two-Dimensional Electron Transport and Scattering in Bi(111) Surface States

Cited by 12 publications

References 27 publications

Barrier-free subsurface incorporation of3dmetal atoms into Bi(111) films

Barrier-free subsurface incorporation of3dmetal atoms into Bi(111) films

Diffusing magnetic Tb impurities and magnetotransport in strongly spin-polarized Bi films

Manipulation of Electronic Transport in the Bi(111) Surface State

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