Two-dimensional field mapping of monolithic microwave integrated circuits using electrooptic sampling techniques

Mertin, W.

doi:10.1007/bf00820150

Cited by 7 publications

(2 citation statements)

References 25 publications

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“…There is increasing interest in the development of nearfield measuring techniques [1,2] for the characterisation of Monolithic Microwave Integrated Circuits (MMIC) as complementary techniques to Vector Network Analysers (VNA). The advantages of near-field measurement over VNAs is that the latter are limited to measurements at the input and output ports of the device under test, providing no information about the internal behaviour of the measured device.…”

Section: Introductionmentioning

confidence: 99%

Electrooptic mapping of a MESFET interdigitated structure

Rodriguez-Llorente

Dudley

Roddie

1999

1999 29th European Microwave Conference

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The electric field above a MESFET has been measured using electrooptic sampling. The measurements show the electric field distribution above the interdigitated structure to be asymmetric, suggesting an unbalanced distribution of the amplification between the fingers. This result is just one example of how electrooptic sampling can detect problems inside a device not detectable using traditional vector network analyser techniques.

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Section: Introductionmentioning

confidence: 99%

Electrooptic mapping of a MESFET interdigitated structure

Rodriguez-Llorente

Dudley

Roddie

1999

1999 29th European Microwave Conference

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“…Meyer [15] demonstrated the ability to map electric field distributions over an area by scanning the area of interest using a point sampler. Mertin [16] reviews development of two-dimensional (2-D) measurement technologies and presents results from an automated scanning point sampler. Of the groups studying photoconductive switches, the latter two have studied the operation of switches in applications having high fields [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Subpicosecond imaging system based on electrooptic effect

Jacobs‐Perkins

Currie

Williams³

et al. 1996

IEEE J. Select. Topics Quantum Electron.

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This work presents an ultrafast, interferometric electrooptic sampling system that uses a two-dimensional detector array to image the electric field present on a device. Spatial and temporal resolution are comparable to conventional "point" electrooptic sampling systems, <5 m and <1 ps, respectively. Voltage sensitivity is expected to be 270 mV and may achieve less than 4 mV with sensor cooling and a more effective electrooptic material. A coplanar silicon structure with 10-m feature size would have a field sensitivity of 27 kV/m and 400 V/m, respectively. This compares favorably with the reported sensitivity of 10 5 V/m for prior imagers and 10 V/m for point samplers. Applications for an E-field "imager" include characterization of field distributions in planar passive microwave devices, multiport analog and digital devices, and studying device and materials physics.

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