Two-dimensional junction profiling by selective chemical etching: Applications to electron device characterization

Abstract

Articles you may be interested inComparative study of two-dimensional junction profiling using a dopant selective etching method and the scanning capacitance spectroscopy method

One- and two-dimensional dopant/carrier profiling for ULSI

“…An extreme case of tomography is the "Lateral SIMS" approach of von Criegern [57,58] whereby he sacrifices the depth resolution completely and performs a SIMS profile on the side of the sample. The results are somewhat ambiguous to interpret as now not a dopant distribution is determined but merely the integral over the entire depth at each spatial location.…”

Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

“…Eliminating the use of a diluent (CH 3 COOH͒ and carrying out etching at a lower temperature ͑5°C͒ resulted in better control of the etching process. Etching carried out in the presence of a UV source enhanced the selectivity for p-type as was reported by Spinella et al 12 The ability to measure small changes in the thickness of material removed by the etching process was considered in terms of maximizing the number of thickness fringes present in a TEM micrograph of the etched region. The number of thickness fringes is directly related to the diffracting conditions used in imaging and thus is user selectable.…”

“…The selective etching of p ϩ regions requires the etching to be carried out under the influence of an ultraviolet ͑UV͒ source in order to achieve selectivity. 12 It has been suggested that the p-n junction behaves in the chemical solution like a solar cell. The large amount of free carriers generated by the light into the space-charge region of the junction are separated, and a hole current flows toward the boron-doped region.…”

Two-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimen

“…Conventionally, the chemical etching delineation method has been used for 2D dopant profile observation involving selective chemical etching according to the concentration level of dopant by dipping the thin TEM specimens in the chemical etchant after their preparation [8][9][10][11][12][13][14]. After the etching, junction delineated profiles are observed by means of electron microscopy.…”

“…The resulting interference pattern (hologram) can be used to recover both the phase shift and the amplitude of the transmitted wave. Recently, this technique has been employed for 2D dopant profiling of semiconductor devices [3][4][5][6][7].Conventionally, the chemical etching delineation method has been used for 2D dopant profile observation involving selective chemical etching according to the concentration level of dopant by dipping the thin TEM specimens in the chemical etchant after their preparation [8][9][10][11][12][13][14]. After the etching, junction delineated profiles are observed by means of electron microscopy.…”