Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

Ma, Yuhang; Liang, Huanrong; Guan, Xinyi; Xu, Shuhua; Tao, Meiling; Liu, Xinyue; Zheng, Zhaoqiang; Yao, Jiandong; Yang, Guowei

doi:10.1039/d4nh00170b

Nanoscale Horiz.

2024

DOI: 10.1039/d4nh00170b

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Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

Yuhang Ma,

Huanrong Liang,

Xinyi Guan

et al.

Abstract: The applications of 2D material photodetectors in extensive fields, including imaging, health monitoring, tracking, logic operation, ultraviolet monitoring, communications, automatic driving, and acoustic signal detection, have been introduced.

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Cited by 3 publications

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Performance improvement of GaAsSb/InGaAs DQW heterostructure by uni- and bi-axial pressure and field for IR-photodetector application

Ali,

Quraishi,

Khan

et al. 2024

Physica B: Condensed Matter

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Performance improvement of GaAsSb/InGaAs DQW heterostructure by uni- and bi-axial pressure and field for IR-photodetector application

Ali,

Quraishi,

Khan

et al. 2024

Physica B: Condensed Matter

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New paradigms of 2D layered material self-driven photodetectors

Guan,

Chen,

et al. 2024

Nanoscale

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Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer

Li,

Meng,

Wang

et al. 2024

Opt. Express

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We present a high-performance Ge/Si PIN photodetector that leverages the advanced Ge/Si hetero-bonding method. The sputtered microcrystalline Ge is utilized as the interlayer, in conjunction with Smart-Cut technology, to fabricate high-quality Si-based Ge films. The exfoliated Ge film exhibits a surface roughness of 0.196 nm and a full width at half maximum of XRD peak of merely 70 arcseconds, which is much lower than that of the epitaxial ones. The Ge/Si PIN photodetectors based on the exfoliated Ge films are systematically optimized and analyzed, with particular emphasis on the effects of crystal quality and interlayer thickness on device performance. The device with a 2 nm-thick Ge interlayer demonstrates a dark current density of 32.8 mA/cm2 at a bias of -1 V, accompanied by an ideality factor as low as 1.33. At a wavelength of 1310 nm, the device achieves a responsivity of 0.61 A/W, and Ge devices featuring a 13 µm-diameter mesa exhibited a high 3 dB bandwidth of 24.3 GHz. The interlayer hetero-bonding technology effectively facilitates the integration of photodetectors onto Si platforms, offering substantial potential for a diverse array of applications.

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Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

Abstract: The applications of 2D material photodetectors in extensive fields, including imaging, health monitoring, tracking, logic operation, ultraviolet monitoring, communications, automatic driving, and acoustic signal detection, have been introduced.

Cited by 3 publications

References 235 publications

Performance improvement of GaAsSb/InGaAs DQW heterostructure by uni- and bi-axial pressure and field for IR-photodetector application

Performance improvement of GaAsSb/InGaAs DQW heterostructure by uni- and bi-axial pressure and field for IR-photodetector application

New paradigms of 2D layered material self-driven photodetectors

Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer

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