Two-dimensional materials enabled next-generation low-energy compute and connectivity

Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

“…Moreover, recently the rapid rise of big data and internet-of-things (IoT) along with beyond-CMOS computing paradigm like IMC and NMC has resulted in a huge demand for a dense non-volatile memory with high processing speed and reliability requirements that are presently difficult to achieve with any single commercially available largescale memory technology existing as of today. [9] Therefore, amongst the various new memory technologies such as ferroelectric (Fe)-, [161] resistive (Re)-, [162][163][164] phase-change (PC)-, [165] and magnetic (M)- [166] RAM that have been explored, spin transfer torque (STT)-and spin orbit torque (SOT)-MRAMs have emerged as promising candidates owing to their non-volatile nature, low power, fast read and write time, high endurance, good reliability, and scalability. [166] The key component of MRAMs are MTJs (Figure 6a), consisting of an insulating TB separating two FM-electrodes-one with a fixed magnetization (along the out-of-plane direction) called the pinned layer (PL), and the other with a controllable magnetization called the free layer (FL), whose parallel (P)/antiparallel (AP) magnetization states with respect to the PL determine the low (LRS)-and high (HRS)-resistance states of the MTJ (Figure 6a), respectively.…”

“…[190] Although, the demonstration of such spin-based devices for IMC and NMC is currently limited to the use of conventional materials, it is expected that the aforementioned advantages of 2D-Ms will play a key role in the development of the next generation of beyond VN computing architectures. [9] 2109894 (14 of 32)…”

“…This is made possible by their principle of band-to-band tunneling (BTBT) operational physics, which allows carriers to tunnel from the occupied source VB to the empty channel CB upon the application of a suitable gate-source voltage (V GS ). However, despite the immense theoretical promise of TFETs in delivering high-performance low-energy logic computing solutions [9] through well designed 2D-TFETs leveraging unique structural and physical properties of 2D-Ms (Figure 10a), [2,8,10] several decades of intense experimental efforts are still yet to yield a practical device with desirable characteristics. This is due to the requirement for several pristine structural and stringent design elements, discussed below, that otherwise degrade the TFET performance.…”

“…[5][6][7] To efficiently implement these novel devices and architectures, however, we need to look beyond conventional material systems, to new emerging class of materials, which present exotic structural and electronic properties that are more suitable for exploiting quantum mechanical effects. Particularly, structural properties of inherent thinness [8][9][10][11] -favoring superior electrostatic As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement.…”

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

“…A gate controls the electrostatic potential in the channel, but to avoid leakage currents, a befitting dielectric is critically required between the gate and the channel. The key to improving transistor materials is to shrink dimensions, − and the thickness of the channel, as well as the dielectric, dictate how much the transistor can be scaled. The minimal thickness and natural out-of-plane passivation of 2D materials make them very attractive for transistor channel materials.…”