Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS 2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQW's) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS 2 and MoSe 2 -based LEQW's shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe 2 and WSe 2 LEQW's. We show that the EQE of WSe 2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS 2 and MoSe 2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-2 orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe 2 dark.