Two-Dimensional Motion of Unstable Steps Induced by Flow in Solution

Sato, Masahide

doi:10.1143/jpsj.80.074604

Cited by 3 publications

(7 citation statements)

References 19 publications

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“…To study how the roughness of a step changes with impurities, we investigate the time evolution of the width of fluctuation of a step. The width is defined as [13] where N s is the number of steps in one sample, y (i) (x m ) is the position of the ith step at x = x m , andȳ (i) is the average position of the ith step. Figure 3 shows the time evolution of w s with various α.…”

Section: Results Of Simulationmentioning

confidence: 99%

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Effect of immobile impurities on motion of steps on a vicinal face

Sato

2011

Phys. Rev. E

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We carry out Monte Carlo simulations and study the dependence of the behaviors of steps on impurities on a vicinal face. We assume that the impurities are immobile and the lifetime of them is much longer than that of adatoms. During growth, the impurities in front of a step prevent the step from advancing. If a wide terrace appears due to the fluctuations of step positions, the number of impurities on the terrace is more than other terraces. The step at the upper side of the wide terrace is slower than other steps, so that an equidistant train of steps becomes unstable. In our Monte Carlo simulations, with steps gathering and separating repeatedly, the bunches of steps are formed on the unstable surface.

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Section: Results Of Simulationmentioning

confidence: 99%

“…To find the dependence of the behaviors of steps in the late stage on parameters, we investigate the time evolution of the impurity density, w s , and width of terrace width fluctuation, w t , with various parameters. w t is defined as [13] …”

Section: Results Of Simulationmentioning

confidence: 99%

Effect of immobile impurities on motion of steps on a vicinal face

Sato

2011

Phys. Rev. E

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“…In previous studies, 18,19,23) an upper limit of the bunch size exists, and an equidistant array of bunches is formed. In our simulation, however, the limit of the bunch size was not seen and a large single bunch was finally formed.…”

Section: Summary and Brief Discussionmentioning

confidence: 99%

“…The other possibility is the difference in the depth of the diffusion field in the solution. In previous studies, 18,19,23) compared with the width of the system size in the x-direction, the depth of the diffusion field is very small, so that the interaction between bunches through the diffusion field is limited. Thus, if the bunches are large and the distance between them is sufficiently large, each bunch moves independently and bunches with the same size periodically appear.…”

Section: Summary and Brief Discussionmentioning

confidence: 99%

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Formation of Step Bunches Induced by Flow in Solution

Inaba

Sato

2012

J. Phys. Soc. Jpn.

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We study the formation of step bunches induced by flow in solution during growth. In showed that the step-down flow in solution causes bunching. In this research, we study the dependence of step behavior on some parameters. With a slow flow, the separation and coalescence between steps and bunches occur frequently during step bunching.With increasing flow rate, the frequency decreases and tight bunches are formed. The decrease in the frequency also occurs with increasing strength of the repulsion between steps.

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Solution Growth on Concave Surface of 4H-SiC Crystal

Daikoku

Kado

Seki

et al. 2016

Crystal Growth & Design

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A long-term growth of high-quality 4H-SiC single crystals by a topseeded solution growth method using a Si−Cr-based melt was investigated. A new growth technique called "solution growth on concave surface" (SGCS) was developed to help prevent solvent inclusions. The concave shape of the growth surface was achieved by controlling the meniscus height, which enhances the step provision from the periphery to the center. In contrast, under the growth surface, the solution flows from the center to the periphery through convection by inductive heating. The opposite directions of the step flow and solution flow during solution growth create a smooth surface without solvent inclusions. SGCS was used to successfully grow a 1-in. diameter 4H-SiC crystal with a thickness of 30 mm, which is the thickest reported for a solution growth technique, and 1.7-in. diameter high-quality wafers without solvent inclusions were obtained. Schottky barrier diodes were fabricated on 4H-SiC substrates grown by SGCS, which demonstrated breakdown voltages in excess of the 1.2 kV required for hybrid vehicle applications.

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Two-Dimensional Motion of Unstable Steps Induced by Flow in Solution

Cited by 3 publications

References 19 publications

Effect of immobile impurities on motion of steps on a vicinal face

Effect of immobile impurities on motion of steps on a vicinal face

Formation of Step Bunches Induced by Flow in Solution

Solution Growth on Concave Surface of 4H-SiC Crystal

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