Two-dimensional numerical analysis of the collection mechanism of single event transient current in NMOSFET

Qing-Qing, Zhuo; Liu, Hongxia

doi:10.7498/aps.61.218501

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…The time parameter controls the time required for heavy ions to penetrate into the material. It is worth noting that the model uses the LET value as the default parameter, and the conversion relationship between the two units of this parameter is [28]…”

Section: Device Simulation Modelmentioning

confidence: 99%

A New Type of Si-Based MOSFET for Radiation Reinforcement

Liu,

Zhou,

Zhang

et al. 2024

Micromachines

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This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/μm and 1 pC/μm Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source.

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Section: Device Simulation Modelmentioning

confidence: 99%

A New Type of Si-Based MOSFET for Radiation Reinforcement

Liu,

Zhou,

Zhang

et al. 2024

Micromachines

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show abstract

“…[12] Recently, many local studies have been done on the SET characteristics of par-tially depleted (PD)-SOI MOSFETs. [13,14] Most of them analyze the SET characteristics using simulation tools, and few results have been obtained using pulsed laser systems.…”

Section: Introductionmentioning

confidence: 99%

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET ^*

Wu¹,

Gao²,

Li³

et al. 2017

Chinese Phys. B

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In this study, we investigate the single-event transient (SET) characteristics of a partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor (p-BJT) effect by performing both a laser test and simulations.

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“…Charge collection is usually the sum of drift, diffusion and parasitic bipolar amplification components. [3][4][5] Previous research has shown that the SETs generated in PMOSs dominate the overall SETs, [6][7][8] thus the heavy-ion response mechanisms for PMOSs demand more studies and analysis. To understand the single-event charge collection and distinguish the bipolar effect from the other two components (drift and diffusion), simulations were conducted using devices with and without the source implant (i.e., with and without the emitter junction of the parasitic bipolar transistor).…”

Section: Introductionmentioning

confidence: 99%

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

He¹,

Chen²

2014

Chinese Phys. B

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The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.

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Two-dimensional numerical analysis of the collection mechanism of single event transient current in NMOSFET

Cited by 5 publications

References 7 publications

A New Type of Si-Based MOSFET for Radiation Reinforcement

A New Type of Si-Based MOSFET for Radiation Reinforcement

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET ^*

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

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Two-dimensional numerical analysis of the collection mechanism of single event transient current in NMOSFET

Cited by 5 publications

References 7 publications

A New Type of Si-Based MOSFET for Radiation Reinforcement

A New Type of Si-Based MOSFET for Radiation Reinforcement

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET *

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

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Product

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Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET ^*