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Velocity undershoot in zinc blende (ZB) and wurtzite (WZ) InN is investigated by ensemble Monte Carlo (EMC) calculation. The results show that velocity undershoot arises from the relatively long energy relaxation time compared with momentum. Monte Carlo transport simulations over wide range of electric fields is presented in the paper. The results show that velocity undershoot impacts the electron transport greatly, compared with velocity overshoot, when the electric field changes quickly with time and space. A comparison study between WZ and ZB InN shows that WZ InN has more advantages in device applications due to its excellent electron transport properties.

The single event effects in NMOSFET at different values of drain bias, gate length and striking location are thoroughly analyzed by two-dimensional numerical simulator in this paper. The results show that single event transient current increases with the increase of drain bias and with the decrease of gate length. Furthermore, single event transient current varies with the electric field at some places in the device. The present study provides important guidance on the devices design of mitigating the single event effects.

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET * Zhang Yue(张 月) a)b) † , Zhuo Qing-Qing(卓青青) a)b) , Liu Hong-Xia(刘红侠) a)b) , Ma Xiao-Hua(马晓华) b)c) , and Hao Yue(郝 跃) b)