Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

Abstract

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET * Zhang Yue(张 月) a)b) † , Zhuo Qing-Qing(卓青青) a)b) , Liu Hong-Xia(刘红侠) a)b) , Ma Xiao-Hua(马晓华) b)c) , and Hao Yue(郝 跃) b)

Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

“…Neutral hydrogen released in reaction (10) can take part in forward reactions ( 6) and ( 7), as well as in reverse reactions ( 4) and ( 5), rounding up the chain of reactions ( 4)- (10).…”

“…The NBTI has been found to occur mostly in p-channel metaloxide semiconductor field-effect transistors (MOSFETs) operated at elevated temperatures (100 • C-250 • C) under negative gate oxide fields in the range 2 MV/cm-6 MV/cm. [1][2][3][4][5][6][7][8][9][10] From a relatively unknown problem in the past, NBTI has become an important reliability issue in metal-oxide semiconductor (MOS) technology primarily as a consequence of aggressive gate oxide scaling accompanied by less aggressive scaling of operating voltage. It is well known that this phenomenon is related to the stress-induced generation of oxide-trapped charge (N ot ) and interface traps (N it ).…”

Energy distribution extraction of negative charges responsible for positive bias temperature instability

“…[1,2] Although the device performance has been promoted significantly, such as drain current enhancement and gate leakage reduction, reliability issues of high-k/metal gate devices are becoming more serious and complicated due to introducing a dual-layer structure of the dielectric compared with the traditional monolayer silicon dioxide. [3][4][5] Positive bias temperature instability (PBTI), one of the most important concerns, has become more serious and attracts much attention. Three theories have been proposed to explain the PBTI characteristics.…”