Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells

Heiser, Gernot; Aberle, A.G.; Wenham, Stuart; Green, M. A.

doi:10.1007/978-3-7091-6657-4_96

Cited by 2 publications

(2 citation statements)

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“…Contact pitch affects cell parameters and maintain tradeoff between recombination and resistive losses [45]. Moreover, widely spaced contacts are responsible for ohmic losses and degrade the efficiency of solar cells [46].…”

Section: Simulation Resultsmentioning

confidence: 99%

Simulation Results: Optimization of Contact Ratio for Interdigitated Back-Contact Solar Cells

Budhraja

Devayajanam

Basnyat

2017

International Journal of Photoenergy

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In the fabrication of interdigitated back contact (IBC) solar cells, it is very important to choose the right size of contact to achieve the maximum efficiency. Line contacts and point contacts are the two possibilities, which are being chosen for IBC structure. It is expected that the point contacts would give better results because of the reduced recombination rate. In this work, we are simulating the effect of contact size on the performance of IBC solar cells. Simulations were done in three dimension using Quokka, which numerically solves the charge carrier transport. Our simulation results show that around 10% of contact ratio is able to achieve optimum cell efficiency.

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Section: Simulation Resultsmentioning

confidence: 99%

Simulation Results: Optimization of Contact Ratio for Interdigitated Back-Contact Solar Cells

Budhraja

Devayajanam

Basnyat

2017

International Journal of Photoenergy

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“…Numerical studies and analytical formulas can be obtained from the literature. [10][11][12] Under forward injection, the excess minority-carrier concentration n(r) in the base depends on the position r ¼ (x, y, z) and is determined by the Laplace equation (injection case). The Laplace equation…”

Section: Theorymentioning

confidence: 99%

Analytical model for the diode saturation current of point-contacted solar cells

Plagwitz

Brendel

2005

Prog. Photovolt: Res. Appl.

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Point-contacted solar cells exhibit three-dimensional transport effects due to a spatially inhomogeneous surface recombination. Complex multi-dimensional finite element simulations are commonly applied to model such devices. This paper presents an empirical analytic equation for the diode saturation current of a point-contacted base of a solar cell that accounts for three-dimensional transport. The input parameters of the model that characterize the back surface are: recombination velocity at the contacts; recombination velocity between the contacts; fraction of surface area covered by the contacts; and the contact spacing. We test this model experimentally by conducting spatially resolved minority-carrier lifetime measurements on silicon wafers with point contacts of various sizes and spacings. The diode saturation currents derived from the lifetime measurements agree with the values predicted by the analytic model.

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Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells

Cited by 2 publications

References 1 publication

Simulation Results: Optimization of Contact Ratio for Interdigitated Back-Contact Solar Cells

Simulation Results: Optimization of Contact Ratio for Interdigitated Back-Contact Solar Cells

Analytical model for the diode saturation current of point-contacted solar cells

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