Two‐Dimensional Oxide Crystals for Device Applications: Challenges and Opportunities

Abstract

Atomically thin two‐dimensional (2D) oxide crystals have garnered considerable attention because of their remarkable physical properties and potential for versatile applications. In recent years, significant advancements have been made in the design, preparation, and application of ultrathin 2D oxides, providing many opportunities for new‐generation advanced technologies. This review focuses on the controllable preparation of 2D oxide crystals and their applications in electronic and optoelectronic devices. Based on their bonding nature, we first summarize the various types of 2D oxide crystals, including both layered and nonlayered crystals, as well as their current top‐down and bottom‐up synthetic approaches. Subsequently, in terms of the unique physical and electrical properties of 2D oxides, we emphasize recent advances in device applications, including photodetectors, field‐effect transistors, dielectric layers, magnetic and ferroelectric devices, memories, and gas sensors. Finally, conclusions and future prospects of 2D oxide crystals are presented. We hope that this review will provide comprehensive and insightful guidance for the development of 2D oxide crystals and their device applications.This article is protected by copyright. All rights reserved

Synergy of W doping and oxygen vacancy engineering on d-band center modulation for enhanced gas sensing performance

“…The development and implementation of novel sensing materials have received increased attention due to their versatility in different environments. 8,9 Semiconductor metal oxide (SMO) nanostructures have been widely considered to be suitable sensing materials for the detection of volatile organic compounds (VOCs) due to their inexpensive preparation, tunable structure, and distinct surface and interfacial properties. 10 However, their practical implementation is significantly limited by some common limitations, such as high operating temperatures (>200 °C), low sensitivity, and/or insufficient selectivity.…”

Hybrid bronzes: mixed-valence organic–inorganic metal oxides as a tunable material platform

“…Amine/ammonium intercalation has also been demonstrated for hydrogen bronzes of the form H x MO y and other layered W, Mo, and V oxides, 35–37 but without extensive structural characterization or control of molecular functionality. Furthermore, while isolating atomically thin metal-oxide layers yields important electronic phenomena—such as highly correlated electrons, useful model systems for solid-state physics in the context of magnetism and long-range order, and functional systems relevant for next-generation electronics 38,39 —it remains a long-standing challenge. Hybrid materials represent an opportunity to produce electronically isolated two-dimensional metal-oxide layers in stable, bulk three-dimensional form, yet their exploration in this context also remains underdeveloped.…”

Boosting flexible electronics with integration of two‐dimensional materials

“…The creation of heterostructures involving 2D materials 57,58 facilitates the functional integration of various devices, including transistors, logic gates, 59,60 and memristors. The vertical lattice-free mismatch characteristic 61,62 of 2D materials makes their combination and structural design more convenient. 63 By manipulating the stacking mode and interactions between different 2D materials, specific electronic energy-level structures [64][65][66] and band alignments 67 can be achieved, enabling the realization of more complex functionalities in flexible electronics.…”